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Journal of Materials Science

, Volume 52, Issue 9, pp 5223–5231 | Cite as

Effect of dopant segregation and negative differential mobility on multi-quantum well activation energy

  • D. M. Pedroso
  • T. G. Santos
  • C. A. Delfino
  • G. S. Vieira
  • F. M. Fernandes
  • A. A. Quivy
  • A. Passaro
Original Paper
  • 358 Downloads

Abstract

It is shown that the inclusion of dopant segregation, negative differential mobility and thermal assisted tunnelling to the calculation of dark current activation energy provides a much better fitting to the experimental results than geometrical or Poole–Frenkel models and handles well its voltage asymmetry and nonlinearity. Besides, the transport model obtained is able to fit the current–voltage curves for both bias polarities with almost the same transport parameters. A practical method to estimate the segregation length is discussed. A consequence of this method is a more accurate set of values for the transport parameters of the structure, considering direct and reverse bias.

Keywords

Apparent Activation Energy Drift Velocity Dark Current Reverse Bias Transport Parameter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

The authors are grateful to Dr. N. M. Abe and Dr. R. Y. Tanaka for computational designing the sample. This work was supported by Financiadora de Estudos e Projetos (FINEP) [Grant Numbers 01.09.0395.00 and 01.011.0087.00]; and Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) [Grant Numbers 559908/2010-5, 310509/2012-2, 310578/2012-4, 403018/2013-7]. D.M.P. and T.G.S. also acknowledge the financial support of Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES).

Compliance with ethical standards

Conflict of interest

The authors declare that they have no conflict of interest.

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Copyright information

© Springer Science+Business Media New York 2017

Authors and Affiliations

  • D. M. Pedroso
    • 1
  • T. G. Santos
    • 1
  • C. A. Delfino
    • 2
  • G. S. Vieira
    • 1
    • 2
  • F. M. Fernandes
    • 3
  • A. A. Quivy
    • 4
  • A. Passaro
    • 1
    • 2
  1. 1.Instituto Tecnológico de AeronáuticaITASão José Dos CamposBrazil
  2. 2.Divisão de Física AplicadaInstituto de Estudos Avançados, IEAvSão José Dos CamposBrazil
  3. 3.Centro de Tecnologia e Ciências, Faculdade de EngenhariaUniversidade Estadual do Rio de JaneiroMaracanã, Rio de JaneiroBrazil
  4. 4.Instituto de Física da Universidade de São PauloLaboratório de Novos Materiais Semicondutores (LNMS)São PauloBrazil

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