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Journal of Materials Science

, Volume 51, Issue 1, pp 382–404 | Cite as

Review: grain boundary faceting–roughening phenomena

  • B. B. Straumal
  • O. A. Kogtenkova
  • A. S. Gornakova
  • V. G. Sursaeva
  • B. Baretzky
50th Anniversary

Abstract

Similar to free surfaces, the grain boundaries (GBs) in metals, semiconductors and insulators can contain flat (faceted) and curved (rough) portions. In the majority of cases, facets are parallel to the most densely packed planes of coincidence sites lattice formed by two lattices of abutting grains. Facets disappear with the increasing temperature (faceting–roughening transition) and the increasing angular distance from coincidence misorientation. The temperature of GB faceting–roughening transition T R decreases with the increasing inverse density of coincidence sites Σ. In case of fixed Σ, T R decreases with the decreasing density of coincidence sites in the GB plane. The intersection line (ridge) between facets or between facets and curved (rough) portions of surfaces can be of first order (two different tangents in the contact point) or of second order (common tangent, continuous transitions). The rough (curved) portions of GB can also form the first-order rough-to-rough ridges (with two tangents). GB facets control the transition from normal to abnormal grain growth and strongly influence the GB migration, diffusion, wetting, fracture and electrical conductivity.

Notes

Acknowledgements

The authors thank the Russian Foundation for Basic Research (Contracts 14-03-31510 and 14-08-00972), the Russian Federal Ministry for Education and Science (Grants 14.A12.31.0001 and Increase Competitiveness Program of NUST «MISiS» К2-2014-013) and the Polish National Science Centre (Grant OPUS UMO-2014/13/B/ST8/04247) for the financial support.

Compliance with ethical standards

Conflict of Interest

The authors declare that they have no conflict of interest.

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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  • B. B. Straumal
    • 1
    • 2
    • 3
    • 4
  • O. A. Kogtenkova
    • 1
  • A. S. Gornakova
    • 1
  • V. G. Sursaeva
    • 1
  • B. Baretzky
    • 2
  1. 1.Institute of Solid State PhysicsRussian Academy of SciencesChernogolovkaRussia
  2. 2.Karlsruhe Institute of Technology (KIT)Institute of NanotechnologyEggenstein-LeopoldshafenGermany
  3. 3.Moscow Institute of Physics and Technology (State University)DolgoprudnyRussia
  4. 4.Laboratory of Hybrid NanomaterialsNational University of Science and Technology «MISIS»MoscowRussia

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