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Enhancement of thermoelectric power in layered Bi2Sr2Co2−x Ir x O y single crystals

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Abstract

We report on the structural, electrical, and thermal transport properties of the single crystals of Bi2Sr2Co2−x Ir x O y (0 ≤ x ≤ 0.2). Large-sized (centimeter-level) and good-quality single crystals were grown by a modified flux method. The substitution of Ir ions for Co ones makes the in-plane resistivity ρ ab increase monotonically, whereas, the in-plane thermopower S ab initially increases and then decreases as x is larger than 0.1. Therefore, among all samples, the in-plane power factor P ab (=S 2ab /ρ ab) of Bi2Sr2Co1.9Ir0.1O y would reach a maximum value of 116.4 μWm−1K−2 at 300 K and shows a significant improvement of about 20 % compared to that of the parent sample. Our results indicate that an appropriate doping of Ir ions at Co-sites may provide an effective way to enhance the thermoelectric performance of Bi2Sr2Co2O y system.

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Acknowledgements

This work is supported by the National Key Basic Research under Contract No. 2011CBA00111, and the National Nature Science Foundation of China under Contract No. 11174293, U1232140, 11174288, and 10904151, and the Scientific Research Foundation for the Returned Overseas Chinese Scholars.

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Authors and Affiliations

  1. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People’s Republic of China

    Yanan Huang, Bangchuan Zhao, Shuai Lin, Jie Yang, Wenhai Song, Ran Ang & Yuping Sun

  2. High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, 230031, People’s Republic of China

    Yuping Sun

  3. University of Science and Technology of China, Hefei, 230026, People’s Republic of China

    Yuping Sun

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  1. Yanan Huang
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  2. Bangchuan Zhao
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  4. Jie Yang
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  7. Yuping Sun
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Correspondence to Bangchuan Zhao or Yuping Sun.

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Huang, Y., Zhao, B., Lin, S. et al. Enhancement of thermoelectric power in layered Bi2Sr2Co2−x Ir x O y single crystals. J Mater Sci 49, 4636–4642 (2014). https://doi.org/10.1007/s10853-014-8166-7

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  • DOI: https://doi.org/10.1007/s10853-014-8166-7

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