Journal of Materials Science

, Volume 49, Issue 3, pp 1368–1375 | Cite as

Microstructure and properties of Sip/Al–20 wt% Si composite prepared by hot-pressed sintering technology

  • Jun Liu
  • Ziyang Xiu
  • Xue Liang
  • Qiang Li
  • Murid Hussain
  • Jing Qiao
  • Longtao Jiang


In the present work, 50 vol% Sip/Al–20Si composite was prepared by hot-pressed sintering technology. Si particles were uniformly distributed in the Sip/Al–20Si composite, and only the presence of Si and Al phases were detected by XRD analysis. Dislocations, twins, and stacking faults were found in the Si particles. Several Si phases were found to be precipitated between Al matrix and Si particles. Si/Al interface was clean, smooth, and free from interfacial product. HRTEM indicated that the Si/Al interface was well bonded. The average CTE and thermal conductivity (TC) of Sip/Al–20Si composite were 11.7 × 10−6/°C and 118 W/(m K), respectively. Sip/Al–20Si composite also demonstrated high mechanical properties (bending strength of 386 MPa). Thus, the comprehensive performance (low density and CTE, high TC, and mechanical properties) makes the Sip/Al–20Si composite very attractive for application in electron packaging.


Crystal Defect Eutectic Silicon Thermal Expansion Behavior Interfacial Product Particle Reinforce Metal Matrix Composite 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



Project (AWJ-M13-15) was supported by the Open-Fund Research of State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, China.


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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • Jun Liu
    • 1
  • Ziyang Xiu
    • 1
  • Xue Liang
    • 2
  • Qiang Li
    • 2
  • Murid Hussain
    • 3
  • Jing Qiao
    • 1
  • Longtao Jiang
    • 1
  1. 1.School of Materials Science and EngineeringHarbin Institute of TechnologyHarbinPeople’s Republic of China
  2. 2.Laboratory for MicrostructuresShanghai UniversityShanghaiPeople’s Republic of China
  3. 3.Department of Chemical EngineeringCOMSATS Institute of Information TechnologyLahorePakistan

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