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Journal of Materials Science

, Volume 49, Issue 1, pp 88–93 | Cite as

Rashba spin−orbit coupling effect on tunneling time in semiconductor spintronic junctions

  • S. M. Mirzanian
  • A. A. Shokri
  • S. M. Elahi
Article

Abstract

Based on the transfer-matrix method and the group velocity concept, we investigate theoretically the spin tunneling time through single and double barriers of diluted magnetic semiconductor structures in the presence of the Rashba spin−orbit coupling (RSOC) effect. The calculation of transmission probability is based on an effective mass quantum-mechanical approach in the presence of an external magnetic field applied along the growth direction of the junction. The results show that the RSOC has great different influence on spin-dependent tunneling time of electrons with spin up and spin down in these structures. We also study the effect of zero-field conduction band offset on spin-dependent transmission properties. It is found that in the presence of RSOC and a positive zero-field conduction band offset as high as 10 meV, the results show a high degree of spin polarization and spin separation in the tunneling time in the considered system and this aspect may be utilized in designing new spin filter devices.

Keywords

Spin Polarization Dilute Magnetic Semiconductor Tunneling Time Rashba Spin Double Barrier Structure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

One of us (A. A. Shokri) would like to thank the Payame Noor University (PNU) for supporting us with a grant.

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  1. 1.Plasma Physics Research Center, Science and Research Branch Islamic Azad universityTehranIran
  2. 2.Department of PhysicsPayame Noor UniversityTehranIran

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