Journal of Materials Science

, Volume 48, Issue 4, pp 1755–1762 | Cite as

Anisotropic characteristics and morphological control of silicon nanowires fabricated by metal-assisted chemical etching

  • Kong Liu
  • Shengchun Qu
  • Xinhui Zhang
  • Zhanguo Wang


Low-cost fabrication methods enabling the morphological control of silicon nanowires are of great importance in many device application fields. A top-down fabrication method, metal-assisted chemical etching, is proved to be a feasible solution. In this paper, some novel approaches based on metal-assisted chemical etching, alkaline solution etching, and electrochemical anodic etching are presented for fabricating micro- and nano-structures, which reveal the anisotropic characteristics of metal-assisted chemical etching in silicon. A new model is proposed to explain the motility behavior of Ag particles in metal-assisted chemical etching of silicon. It is shown that Ag particle forms a self-electrophoresis unit and migrates into Si substrate along [100] direction independently. Diameter and length control of silicon nanowires are achieved by varying Ag deposition and etching durations of metal-assisted chemical etching, respectively, which provide a facilitation to achieve high-aspect-ratio silicon nanowires at room temperature in a short period. These results show a potential simple method to microstructure silicon for devices application, such as solar cells and sensors.


Silicon Wafer Porous Silicon Silicon Nanowires SiNW Array Deposition Duration 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



This work was mostly supported by the National Basic Research Program of China (Grant No. 2012CB934200), and National Natural Science Foundation of China (Contract Nos. 50990064, 61076009, 61204002).


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Copyright information

© Springer Science+Business Media New York 2012

Authors and Affiliations

  • Kong Liu
    • 1
  • Shengchun Qu
    • 1
  • Xinhui Zhang
    • 2
  • Zhanguo Wang
    • 1
  1. 1.Key Laboratory of Semiconductor Materials ScienceInstitute of Semiconductor, Chinese Academy of SciencesBeijingPeople’s Republic of China
  2. 2.State Key Laboratory of Superlattices and MicrostructuresInstitute of Semiconductor, Chinese Academy of SciencesBeijingPeople’s Republic of China

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