Anisotropic characteristics and morphological control of silicon nanowires fabricated by metal-assisted chemical etching
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Low-cost fabrication methods enabling the morphological control of silicon nanowires are of great importance in many device application fields. A top-down fabrication method, metal-assisted chemical etching, is proved to be a feasible solution. In this paper, some novel approaches based on metal-assisted chemical etching, alkaline solution etching, and electrochemical anodic etching are presented for fabricating micro- and nano-structures, which reveal the anisotropic characteristics of metal-assisted chemical etching in silicon. A new model is proposed to explain the motility behavior of Ag particles in metal-assisted chemical etching of silicon. It is shown that Ag particle forms a self-electrophoresis unit and migrates into Si substrate along  direction independently. Diameter and length control of silicon nanowires are achieved by varying Ag deposition and etching durations of metal-assisted chemical etching, respectively, which provide a facilitation to achieve high-aspect-ratio silicon nanowires at room temperature in a short period. These results show a potential simple method to microstructure silicon for devices application, such as solar cells and sensors.
KeywordsSilicon Wafer Porous Silicon Silicon Nanowires SiNW Array Deposition Duration
This work was mostly supported by the National Basic Research Program of China (Grant No. 2012CB934200), and National Natural Science Foundation of China (Contract Nos. 50990064, 61076009, 61204002).
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