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Wide band-gap investigation of modulated BeZnO layers via photocurrent measurement

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Abstract

We grew modulated BeZnO layers by hybrid plasma-assisted molecular-beam epitaxy/electron-beam deposition. A wide band-gap investigation of the modulated Be x Zn1−x O by means of photocurrent (PC) spectroscopy was conducted. The band-gap energy was directly acquired from the wavelength of the PC peak, caused by the band-to-band transition. By increasing x, which was the rate of the Be elements, the optical band-gap energy was empirically fitted by E BeZnO(x) = 6.32(x–1)x + 7.305x + 3.295. We expect that this finding can open new possibilities for wide band-gap engineering of BeZnO layers, which can be utilized as barrier layers in active layers consisting of ZnO/BeZnO quantum well structures and solar-blind ultraviolet photodetectors.

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Acknowledgements

This work was supported by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2011-0031400).

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Authors and Affiliations

  1. Semiconductor Physics Research Center (SPRC), School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju, 561-756, South Korea

    J. H. Yu, J. H. Kim, H. J. Yang, T. S. Kim, T. S. Jeong & C. J. Youn

  2. Department of Physics, Chosun University, Gwangju, 501-759, South Korea

    K. J. Hong

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  1. J. H. Yu
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  2. J. H. Kim
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  3. H. J. Yang
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  4. T. S. Kim
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  5. T. S. Jeong
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  6. C. J. Youn
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  7. K. J. Hong
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Correspondence to C. J. Youn.

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Yu, J.H., Kim, J.H., Yang, H.J. et al. Wide band-gap investigation of modulated BeZnO layers via photocurrent measurement. J Mater Sci 47, 5529–5534 (2012). https://doi.org/10.1007/s10853-012-6445-8

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  • DOI: https://doi.org/10.1007/s10853-012-6445-8

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