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Journal of Materials Science

, Volume 47, Issue 6, pp 2763–2769 | Cite as

Nanodomain and interface structure in epitaxial BaTiO3 thin films on MgO deposited by magnetron sputtering

  • J. He
  • H. Q. Jiang
  • J. C. Jiang
  • E. I. Meletis
Article

Abstract

High epitaxial quality BaTiO3 films were deposited on the MgO (001) substrate using RF magnetron sputtering at 800 °C by manipulating processing parameters. The BaTiO3 films have a ~200 nm thickness with a very low surface roughness but a rough interface structure with respect to the substrate. The epitaxial BaTiO3 films have a tetragonal crystal structure (a = 4.02 Å and c = 4.11 Å) with a tetragonality (c/a) of 1.02. The c-axis of the film is parallel to the growth direction as characterized by X-ray diffraction, electron diffraction, and high-resolution transmission electron microscopy. The orientation relationship between the film and the MgO is (001)BTO//(001)MgO and 〈100〉BTO//〈100〉MgO. Epitaxial nanodomains were formed in the film with a size ranging from 3 to 20 nm. The formation of the nanodomains is associated with the rough film/substrate interface due to the modification of the substrate surface characteristics (steps, terraces, and kinks) during the process. The two-dimensional interface structure between the film and the substrate was studied and its influence on the film microstructure is discussed.

Keywords

BaTiO3 Lattice Mismatch Misfit Dislocation Radio Frequency Magnetron BaTiO3 Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

This study was supported by the National Science Foundation under Awards NSF/CMMI-0709293, NSF/DMR-0821745 and State of Texas, Advanced Research Program.

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Copyright information

© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  • J. He
    • 1
  • H. Q. Jiang
    • 1
  • J. C. Jiang
    • 1
  • E. I. Meletis
    • 1
  1. 1.Department of Materials Science and EngineeringUniversity of Texas at ArlingtonArlingtonUSA

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