Properties of In-N doped ZnO films synthesized by ion beam assisted deposition
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ZnO has attracted more and more attention due to its wide band gap of 3.37 eV and large exciton of 60 meV [1, 2]. Now it is used widely in blue and ultraviolet light emitting devices . For the development of ZnO-based optoelectronic devices, it is important to grow high quality of both p-type and n-type ZnO films. The n-type ZnO can easily be realized by Al [4, 5], In , or Sr  doping. However, it is rather difficult to fabricate p-type ZnO because ZnO is a natural n-type semiconductor due to the self-compensating effect. Theoretical calculations [8, 9] predict that nitrogen is the best dopant for p-type ZnO, because nitrogen may substitute oxygen in ZnO and act as acceptors. But the solution of nitrogen in ZnO is limited at very low level. Co-doping method of using acceptors and donors simultaneously has been introduced to increase the solution of N in ZnO [10, 11], whereas, N is still highly hard to doping.
Recently, several techniques have been used to prepare...
KeywordsAnnealing Time Ultrasonic Spray Pyrolysis Hydrogen Passivation Roughness Mean Square Doping Nitrogen Atom
This study is supported by Innovation Program (08YZ157), (07-24) of Shanghai Municipal Education Commission and Shanghai Leading Academic Discipline Project (J51402).