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Journal of Materials Science

, Volume 46, Issue 12, pp 4236–4242 | Cite as

Martensitic interfaces and transformation crystallography in Pu–Ga alloys

  • Xiao Ma
  • Robert C. Pond
IIB 2010

Abstract

The face-centered cubic (δ) to monoclinic (α) martensitic transformation in Pu–Ga is unusual because it produces a relative large change of volume up to 20%. Moreover, the transformation crystallography is not predicted satisfactorily by the classical phenomenological theories of martensite crystallography, which is based on the hypothesis that the habit plane is an invariant plane of the total shape change. In this study we use the recently developed topological model where the habit plane, i.e., the interface between the parent and martensite phases, is envisaged as a semi-coherent configuration with coherent terraces reticulated by a network of disconnections or transformation dislocations, and defects producing lattice-invariant deformation. The authors show explicitly that this network not only accommodates the coherency strains, so that no long-range strain field arises, but also produces diffusionless transformation by motion of the disconnections across the interface. It was show that the predicted habit plane inclination with respect to the parent and martensite phases in a Pu–Ga alloy is in good agreement with published experimental observations when the lattice-invariant deformation is \( (201)_{\alpha } /[10\overline{2} ]_{\alpha } \) twinning, as observed experimentally.

Keywords

Martensite Martensitic Transformation Burger Vector Habit Plane Topological Model 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

The authors would like to thank Prof. J. P. Hirth for invaluable discussions. XM gratefully acknowledge the financial support from the National Natural Science Foundation of China (Grant no. 50801029) and the Fundamental Research Funds for the Central Universities (SCUT-2009ZM0127, GDNSF-9451064101002833 and SRFDP-200805611031).

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Copyright information

© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  1. 1.School of Materials Science and EngineeringSouth China University of TechnologyGuangzhouPeople’s Republic of China
  2. 2.School of Engineering, Computing and MathematicsUniversity of ExeterExeterUnited Kingdom

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