Thin films of SnO2:F were prepared by ultrasonic spray pyrolysis method. The effect of fluorine concentration on the structural, optical, and electrical properties of SnO2:F films was investigated. The X-ray diffraction results showed the preferred growth along (110). FTIR was employed to study the defects in SnO2 lattice. The evidence of oxygen vacancy and substitution of fluorine for oxygen in FTIR were investigated. It was found that at low doping levels, fluorine ions preferred to replace the oxygen in the lattice. While beyond a certain doping level, fluorine ions started to occupy interstitial site, which had a negative effect on carrier concentration that, in turn, affected the infrared reflectivity of SnO2:F films. The increased disorder of SnO2 at high doping levels was also shown by FTIR. The discussion of carrier scattering suggested that ionized impurity and/or neutral impurity scattering were the dominant scattering mechanisms in SnO2:F films.
SnO2 Fluorine Carrier Concentration Spray Pyrolysis High Doping Level
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