Temperature dependence of ferroelectric and dielectric properties of textured 0.98(0.94Na0.5Bi0.5TiO3–0.06BaTiO3)–0.02K0.5Na0.5NbO3 thick film
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Textured 0.98(0.94Na0.5Bi0.5TiO3–0.06BaTiO3)–0.02K0.5Na0.5NbO3 thick film was prepared by reactive templated grain growth (RTGG) method. The effect of temperature on ferroelectric and dielectric behaviors of the thick film was investigated. Its dielectric constant as a function of temperature displayed typical relaxation behavior, which was similar to that of NBT-based bulk ceramics. Remnant polarization, saturation polarization, and coercive field of the thick film all decreased with increasing temperature. Dielectric constant and tunability of the film were also dependent on temperature. Electric field dependence of dielectric constant of the thick film suggested a transition from ferroelectric to antiferroelectric phase at around the depolarization temperature. A strong increase in leakage current density with increasing temperature was observed, which could be related to the enhanced activity of conductivity carriers.
KeywordsDielectric Constant Thick Film Loss Tangent Leakage Current Density Domain Switching
The authors would like to acknowledge the support from the National Natural Science Foundation of China under grant No. 50972108, 50932007 and Shanghai Foundation Project under grant 08JC1419100. It was also partially supported by the Research Grants Council of the Hong Kong Special Administrative Region, China (CityU No. 103307).