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Journal of Materials Science

, Volume 44, Issue 13, pp 3556–3560 | Cite as

Thickness effects of Bi3.5Nd0.5Ti3O12 buffer layers on structure and electrical properties of BiFeO3 films

  • Xuemei Chen
  • Guangda Hu
  • Xi Wang
  • Jing Yan
  • Changhong Yang
  • Weibing Wu
Article

Abstract

BiFeO3 (BFO) thin films deposited on various thicknesses (0, 40, 80, and 160 nm) of Bi3.5Nd0.5Ti3O12 (BNT) buffer layers were fabricated on indium tin oxide (ITO)/Si substrates using a metal organic decomposition process. X-ray diffraction (XRD) measurements reveal that the BNT buffer layers can favor the growth of (110)-oriented grains in the BFO films. Well-saturated PE hysteresis loops can be obtained in BFO films with BNT buffer layers due to their lower leakage current densities compared with that in BFO film deposited directly on ITO/Si substrate. A remanent polarization (P r) as large as 70.2 ± 2 μC/cm2 can be achieved in BFO film with 40-nm-thick BNT buffer layer. Further increase of the buffer layer thickness results in the degradation of the rectangularity of PE hysteresis loops, reduction of the P r value, as well as deterioration of the charge-retaining ability for the double-layered films.

Keywords

Buffer Layer BiFeO3 Leakage Current Density Remnant Polarization Chemical Solution Deposition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

This work was supported by funding from the National Natural Science Foundation of China (90207025 and 50502016) and the National Science Foundation of Shandong Province (Z2004G06).

References

  1. 1.
    Kiselev SV, Ozerov RP, Zhdanov GS (1963) Sov Phys Dokl 7:742ADSGoogle Scholar
  2. 2.
    Teague JR, Gerson R, James WJ (1970) Solid State Commun 8:1073CrossRefADSGoogle Scholar
  3. 3.
    Smolenskii GA, Chupis I (1982) Sov Phys Usp 25:475CrossRefADSGoogle Scholar
  4. 4.
    Kubel F, Schmid H (1990) Acta Crystallogr B 46:698CrossRefGoogle Scholar
  5. 5.
    Eerenstein W, Morrison FD, Dho J, Blamire MG, Scott JF, Mathur ND (2005) Science 307:1203aCrossRefGoogle Scholar
  6. 6.
    Shvartsman VV, Kleemann W, Haumont R, Kreisel J (2007) Appl Phys Lett 90:172115CrossRefADSGoogle Scholar
  7. 7.
    Lebeugle D, Colson D, Forget A, Viret M (2007) Appl Phys Lett 91:022907CrossRefADSGoogle Scholar
  8. 8.
    Qi X, Tsai PC, Chen YC, Ko CH, Huang JCA, Chen IG (2008) J Phys D 41:232001CrossRefADSGoogle Scholar
  9. 9.
    Hu GD, Cheng X, Wu WB, Yang CH (2007) Appl Phys Lett 91:232909CrossRefADSGoogle Scholar
  10. 10.
    Uchida H, Ueno R, Funakubo H, Koda S (2006) J Appl Phys 100:014106CrossRefADSGoogle Scholar
  11. 11.
    Singh SK, Ishiwara H, Maruyama K (2006) Appl Phys Lett 88:262908CrossRefADSGoogle Scholar
  12. 12.
    Kim JK, Kim SS, Kim W, Bhalla AS, Guo R (2006) Appl Phys Lett 88:132901CrossRefADSGoogle Scholar
  13. 13.
    Li YW, Sun JL, Chen J, Meng XJ, Chu JH (2005) Appl Phys Lett 87:182902CrossRefADSGoogle Scholar
  14. 14.
    Cheng Z, Wang X, Kannan CV, Ozawa K, Kimura H, Nishida T, Zhang S, Shrout TR (2006) Appl Phys Lett 88:132909CrossRefADSGoogle Scholar
  15. 15.
    Huang F, Lu X, Lin W, Cai W, Wu X, Kan Y, Sang H, Zhu J (2007) Appl Phys Lett 90:252903CrossRefADSGoogle Scholar
  16. 16.
    Qi YJ, Lu CJ, Zhang QF, Wang LH, Chen F, Cheng CS, Liu BT (2008) J Phys D 41:065407CrossRefADSGoogle Scholar
  17. 17.
    Liu HR, Wang XZ (2008) J Phys D 41:175411CrossRefADSGoogle Scholar
  18. 18.
    Chen XM, Hu GD, Yan J, Wang X, Yang CH, Wu WB (2008) J Phys D 41:225402CrossRefADSGoogle Scholar
  19. 19.
    Hu GD (2006) J Appl Phys 100:096109CrossRefADSGoogle Scholar
  20. 20.
    Zhong XL, Wang JB, Zheng XL, Zhou YC (2004) Appl Phys Lett 85:5661CrossRefADSGoogle Scholar
  21. 21.
    Yan F, Wang Y, Chan HLW, Choy CL (2003) Appl Phys Lett 82:4325CrossRefADSGoogle Scholar
  22. 22.
    Lee CC, Wu JM, Hsiung CP (2007) Appl Phys Lett 90:182909CrossRefADSGoogle Scholar
  23. 23.
    Cui SG, Hu GD, Wu WB, Yang CH, Jiao LL, Wen Z (2009) J Am Ceram Soc. doi: 10.1111/j.1551-2916.2009.03051.x

Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • Xuemei Chen
    • 1
  • Guangda Hu
    • 1
  • Xi Wang
    • 1
  • Jing Yan
    • 1
  • Changhong Yang
    • 1
  • Weibing Wu
    • 1
  1. 1.School of Materials Science and EngineeringUniversity of JinanJinanChina

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