References
Muranaka S, Bando Y, Takada T (1987) Thin Solid Films 151:355
Wulf H, Quaas M, Steffen H, Hippler H (2000) Thin Solid Films 377:418
Rogozin A, Shevchenko N, Vinnichenko M, Prokert F, Cantelli V, Kolitsch A, Moller W (2004) Appl Phys Lett 85:212
Adurodija FO, Semple L, Bruning R (2006) J Mater Sci 41:7096. doi:https://doi.org/10.1007/s10853-006-0038-3
Muranaka S (1991) Jpn J Appl Phys 30:L2062
Kinbara A, Ohmura M, Kikuchi A (1967) Thin Solid Films 34:37
Hashimoto M (1984) Thin Solid Films 116:373
Kaiser N (1984) Thin Solid Films 116:259
Hoareau A, Hu JX, Jensen P, Melinon P, Treilleux M, Cabaud B (1992) Thin Solid Films 209:161
Korobov V, Leibovitch M, Shapira Y (1994) Appl Phys Lett 65:2290
Sun XW, Huang HC, Kwok HS (1996) Appl Phys Lett 68:2663
Chopra KL (1969) Thin film phenomena. McGraw-Hill, New York, p 195
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Muranaka, S., Hayashi, N. Thickness-induced crystallization of amorphous In2O3 films: influence of the film deposition rate. J Mater Sci 44, 3315–3318 (2009). https://doi.org/10.1007/s10853-008-3172-2
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DOI: https://doi.org/10.1007/s10853-008-3172-2