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Growth kinetics of intermediate phase layers in an early stage of hot dip galvanizing at 450 °C

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Acknowledgement

The authors thank Mrs. Kon for her assistance in the experiments.

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Author notes

  1. Shigeru Ueda

    Present address: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai, 980-8577, Japan

  2. Gou Takahashi

    Present address: Ricoh Optical Industries Co. Ltd., Hanamaki, 025-0303, Japan

Authors and Affiliations

  1. Department of Materials Science and Engineering, Faculty of Engineering, Iwate University, Morioka, 020-8551, Japan

    Shigeru Ueda, Yoshiaki Iijima, Gou Takahashi & Katsunori Yamaguchi

  2. Department of Materials Science and Engineering, Miyagi National College of Technology, Natori, 981-1239, Japan

    Osamu Taguchi

Authors
  1. Shigeru Ueda
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  2. Osamu Taguchi
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  3. Yoshiaki Iijima
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  4. Gou Takahashi
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  5. Katsunori Yamaguchi
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Corresponding author

Correspondence to Katsunori Yamaguchi.

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Ueda, S., Taguchi, O., Iijima, Y. et al. Growth kinetics of intermediate phase layers in an early stage of hot dip galvanizing at 450 °C. J Mater Sci 43, 5666–5668 (2008). https://doi.org/10.1007/s10853-008-2767-y

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  • DOI: https://doi.org/10.1007/s10853-008-2767-y

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