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Journal of Materials Science

, Volume 43, Issue 7, pp 2270–2275 | Cite as

Ammonothermal synthesis of thick gallium nitride film employing acidic mineralizers

  • Dirk Ehrentraut
  • Yuji Kagamitani
  • Akira Yoshikawa
  • Naruhiro Hoshino
  • Hirohisa Itoh
  • Shinichiro Kawabata
  • Katsushi Fujii
  • Takafumi Yao
  • Tsuguo Fukuda
Article

Abstract

Fabrication of wurtzite-type gallium nitride (GaN) thick films on HPVE-grown {0001} GaN substrates under moderate ammonothermal conditions is reported. Supercritical ammonia (NH3) as solvent and the mineralizer ammonium chloride (NH4Cl) is employed for temperature and pressure conditions of 400–550 °C and ≤135 MPa, respectively. Growth rates of 30 μm per day over long-term growth runs were obtained. The effect of surface morphology of the substrate on homoepitaxial nucleation of GaN films prepared from ammonoacid solutions is investigated. Two-dimensional nucleation is obtained for substrates etched by hot concentrated KOH prior film growth. In this case the interface between film and the ( \( 000\overline 1 \)) substrate does not show any signs of voids or island nucleation. Cracking pattern reveals similar mechanical-elastical properties for film and substrate.

Keywords

Gallium Nitride Solvothermal Technique Light Emitter Diode Technology KNH2 Ammonothermal Growth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgement

We gratefully acknowledge funding by the Special Coordination Fund by the Ministry of Education, Culture, Sports, Science and the technology program “Development of Growth Method of Semiconductor Crystals for Next Generation Solid-State Lighting”. Particular gratitude is due to Mitsubishi Chemical for support. Katsuhiko Inaba of Rigaku Corp. assisted with some X-ray measurements at the initial stage of research.

References

  1. 1.
    Adachi S (2005) Properties of group-IV, III–V and II–VI semiconductors. John Wiley & Sons, ChichesterGoogle Scholar
  2. 2.
    Utsumi W, Saitoh H, Kaneko H, Watanuki T, Aoki K, Shimomura O (2003) Nat Mater 2:735CrossRefGoogle Scholar
  3. 3.
    Iwasaki F, Iwasaki H (2002) J Cryst Growth 237–239:820CrossRefGoogle Scholar
  4. 4.
    Ohshima E, Ogino H, Niikura I, Maeda K, Sato M, Ito M, Fukuda T (2004) J Cryst Growth 260:166CrossRefGoogle Scholar
  5. 5.
    Walker AC (1953) J Am Ceram Soc 36:250CrossRefGoogle Scholar
  6. 6.
    Hashimoto T, Fujito K, Saito M, Speck JS, Nakamura S (2005) Jpn J Appl Phys 44:L1570CrossRefGoogle Scholar
  7. 7.
    Wang B, Callahan MJ, Rakes KD, Bouthillette LO, Wang S-Q, Bliss DF, Kolis JW (2006) J Cryst Growth 287:376CrossRefGoogle Scholar
  8. 8.
    Hashimoto T, Fujito K, Wu F, Haskell BA, Fini PT, Speck JS, Nakamura S (2005) Mater. Res. Soc. Symp. Proc. 831 E2.8.1Google Scholar
  9. 9.
    Kagamitani Y, Ehrentraut D, Yoshikawa A, Hoshino N, Fukuda T, Kawabata S, Inaba K (2006) Jpn J Appl Phys 45:4018CrossRefGoogle Scholar
  10. 10.
    Lide DR (ed) (1992) Handbook of chemistry and physics, 72nd edn. CRC Press Boca RatonGoogle Scholar
  11. 11.
    Yoshikawa A, Ohshima E, Fukuda T, Tsuji H, Oshima K (2004) J Cryst Growth 260:67CrossRefGoogle Scholar
  12. 12.
    Denis A, Goglio G, Demazeau G (2006) Mater Sci Eng R 50:167CrossRefGoogle Scholar
  13. 13.
    Li D, Sumiya M, Fuke S, Yang D, Que D, Suzuki Y, Fukuda Y (2001) J Appl Phys 90:4219CrossRefGoogle Scholar
  14. 14.
    Yamane H, Mikawa Y, Yokoyama C (2007) Acta Cryst E 63:i59CrossRefGoogle Scholar
  15. 15.
    Spezia G (1909) Atti Accad Sci Torino 44:95Google Scholar
  16. 16.
    Mikawa Y (2006) Private communicationGoogle Scholar
  17. 17.
    Ehrentraut D, Hoshino N, Kagamitani Y, Yoshikawa A, Fukuda T, Itoh H Kawabata S (2007) J Mater Chem 17:886CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • Dirk Ehrentraut
    • 1
  • Yuji Kagamitani
    • 1
  • Akira Yoshikawa
    • 1
  • Naruhiro Hoshino
    • 1
  • Hirohisa Itoh
    • 2
  • Shinichiro Kawabata
    • 2
  • Katsushi Fujii
    • 3
  • Takafumi Yao
    • 3
  • Tsuguo Fukuda
    • 1
  1. 1.Institute of Multidisciplinary Research for Advanced MaterialsTohoku UniversitySendaiJapan
  2. 2.Mitsubishi Chemical Corp.IbarakiJapan
  3. 3.Center for Interdisciplinary ResearchTohoku UniversitySendaiJapan

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