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Journal of Materials Science

, Volume 43, Issue 8, pp 2935–2946 | Cite as

The electronic band structure of InN, InAs and InSb compounds

  • Rezek Mohammad
  • Şenay Katırcıoğlu
  • Musa El-Hasan
Article

Abstract

The electronic band structure of InN, InAs and InSb has been investigated by ETB. The ETB method has been formulated for sp3d2 basis and nearest neighbor interactions of the compounds and its energy parameters have been derived from the results of the present first principles calculations carried on InN, InAs and InSb. It has been found that the present ETB parameters can produce the band structure of the compounds successfully.

Keywords

Band Structure InSb Full Potential Linearize Augmented Plane Wave Conduction Band State Valence Band Structure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • Rezek Mohammad
    • 1
  • Şenay Katırcıoğlu
    • 1
  • Musa El-Hasan
    • 2
  1. 1.Department of PhysicsMiddle East Technical UniversityAnkaraTurkey
  2. 2.Department of PhysicsAn Najah UniversityWest BankPalestine

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