Journal of Materials Science

, Volume 42, Issue 20, pp 8496–8500 | Cite as

The optical properties of porous silicon produced by metal-assisted anodic etching

  • Yue Zhao
  • Dongsheng Li
  • Wenbin Sang
  • Deren Yang
  • Minhua Jiang


Porous silicon (PS) was obtained from n-type (100) mono-crystalline silicon wafers with different metal using two different illumination conditions. The visible photoluminescence (PL) may come from defect-related radiative centers on PS surface and adsorbed hydrogen atoms may be associated to the elimination of irradiative centers on PS surface, which can be proved by the infrared absorption spectra. The metal can be used as catalytic role to increase the etching rate under back illumination, but under front illumination, the metal can cancel light-generated carrier leading to the decrease of etching rate during anodic etching. Furthermore, the change of minority carrier lifetime is opposite to the change of PL efficiency of PS, which can be Confirmed by the results of μ-PCD measurements.


Porous Silicon Etching Rate Minority Carrier Minority Carrier Lifetime Porous Silicon Layer 
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  1. 1.
    Canham LT (1990) Appl Phys Lett 57:1046CrossRefGoogle Scholar
  2. 2.
    Lehmann V, Gosele U (1991) Appl Phys Lett 58:856CrossRefGoogle Scholar
  3. 3.
    Shelonin EA, Naidenkova MV, Khort AM, Yakovenko AG, Gvelesiant AA, Maronchuk IE (1998) Semiconductors 32(4):443CrossRefGoogle Scholar
  4. 4.
    Kimura T, Nishida Y, Nishida A, Yokoi A, Saito R (1998) J Appl Phys 83(2):1005CrossRefGoogle Scholar
  5. 5.
    Bondarenko V, Kazuchits N, Volchek S, Dolgyi L, Petrovich V, Yakovtseva V, Gaiduk P, Balucani M, Lamedica G, Ferrari A (2003) Phys Stat Sol (a) 197:441CrossRefGoogle Scholar
  6. 6.
    Shi JX, Zhang XX, Gong ML, Zhou JY, Cheah KW, Wong WK (2000) Phys Stat Sol (a) 182:353CrossRefGoogle Scholar
  7. 7.
    Suh KY, Kim KS, Park SY, Lee HH (2001) J Electrochem Soc 148(6):C439CrossRefGoogle Scholar
  8. 8.
    Kim KS, Suh KY, Yoon H, Lee HH (2002) J Electrochem Soc 149(1):C50CrossRefGoogle Scholar
  9. 9.
    Zhu D, Zheng L, Li X, Zhang Y (1999) J Appl Phys 86(1):692CrossRefGoogle Scholar
  10. 10.
    Chen CH, Chen YF (1999) Appl Phys Lett 75(17):2560CrossRefGoogle Scholar
  11. 11.
    Suh KY, Kim YS, Lee HH (2002) Appl Phys Lett 91(12):10206Google Scholar
  12. 12.
    Li X, Bohn PW (2000) Appl Phys Lett 77(16):2572CrossRefGoogle Scholar
  13. 13.
    Chattopadhyay S, Li X, Bohn PW (2002) J Appl Phys 91(9):6134CrossRefGoogle Scholar
  14. 14.
    Li G-B, Liao L-S, Liu X-B, Hou X-Y, Wang X (1997) Appl Phys Lett 70(10):1284Google Scholar
  15. 15.
    Fukuda Y, Furuya K, Ishikawa N, Saito T (1997) J Appl Phys 82(11):5718CrossRefGoogle Scholar
  16. 16.
    Chen QW, Zhu DL, Zhu C, Wang J, Zhang YG (2003) Appl Phys Lett 82(7):1018CrossRefGoogle Scholar
  17. 17.
    Obraztsov AN, Timoshenko VY, Okushi H, Watanabe H (1999) Semiconductors 33(3):323CrossRefGoogle Scholar
  18. 18.
    Gole JL, Dudel FP, Grantier D (1997) Phys Rev B 56(4):2137CrossRefGoogle Scholar
  19. 19.
    Dudel FP, Rieger MM, Pickering JP, Gole JL, Kohl PA, Bottomley LA (1996) J Electrochem Soc 143(8):L164CrossRefGoogle Scholar
  20. 20.
    Dudel FP, Gole JL (1997) J Appl Phys 82(1):402CrossRefGoogle Scholar
  21. 21.
    Schroter W, Kveder V, Eibt MS, Ewe H, Hedemann H, Riedel F, Sattler A (2000) Mater Sci Eng B 72:80CrossRefGoogle Scholar
  22. 22.
    Mchugo SA, Thompson AC, Lamble G, Flink C, Weber ER (1999) Phys B 273–274:371CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • Yue Zhao
    • 1
    • 2
  • Dongsheng Li
    • 2
  • Wenbin Sang
    • 1
  • Deren Yang
    • 2
  • Minhua Jiang
    • 2
    • 3
  1. 1.School of Materials Science and EngineeringShanghai UniversityShanghaiP.R. China
  2. 2.State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhouP.R. China
  3. 3.State Key Laboratory of Crystal MaterialsShandong UniversityJinanP.R. China

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