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Journal of Materials Science

, Volume 42, Issue 20, pp 8496–8500 | Cite as

The optical properties of porous silicon produced by metal-assisted anodic etching

  • Yue Zhao
  • Dongsheng Li
  • Wenbin Sang
  • Deren Yang
  • Minhua Jiang
Article

Abstract

Porous silicon (PS) was obtained from n-type (100) mono-crystalline silicon wafers with different metal using two different illumination conditions. The visible photoluminescence (PL) may come from defect-related radiative centers on PS surface and adsorbed hydrogen atoms may be associated to the elimination of irradiative centers on PS surface, which can be proved by the infrared absorption spectra. The metal can be used as catalytic role to increase the etching rate under back illumination, but under front illumination, the metal can cancel light-generated carrier leading to the decrease of etching rate during anodic etching. Furthermore, the change of minority carrier lifetime is opposite to the change of PL efficiency of PS, which can be Confirmed by the results of μ-PCD measurements.

Keywords

Porous Silicon Etching Rate Minority Carrier Minority Carrier Lifetime Porous Silicon Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • Yue Zhao
    • 1
    • 2
  • Dongsheng Li
    • 2
  • Wenbin Sang
    • 1
  • Deren Yang
    • 2
  • Minhua Jiang
    • 2
    • 3
  1. 1.School of Materials Science and EngineeringShanghai UniversityShanghaiP.R. China
  2. 2.State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhouP.R. China
  3. 3.State Key Laboratory of Crystal MaterialsShandong UniversityJinanP.R. China

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