A novel method for massive fabrication of β-SiC nanowires
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Silicon carbide nanowires (NWs), that were over 200 μm in length and 20–200 nm in diameter, were prepared by high-pressure reaction from SiBONC powder tablets. Annealing temperatures between 1,500 °C and 1,600 °C and Si/B molar ratios between 70:30 and 60:40 were suitable for the growth of the nanowires. The nanowires were fabricated by in situ chemical vapor growth process on the tablets. The SiC nanowires were identified as single crystal β-SiC. The analysis of X-ray diffraction (XRD) and transmission electron microscopy (TEM) showed the single crystalline nature of nanowires with a growth direction of <111>. Massive growth of single crystalline SiC nanowires is important to meet the requirements of the fabrication of SiC nanowire-based nanodevices.
KeywordsSelect Area Electronic Diffraction Pattern Zinc Blend Powder Tablet Graphite Cylinder Boron Trichloride
The authors would like to thank the financial support from the National Natural Science Foundation of China, No. 50472011.
- 13.Givargizov EI (1979) In: Chernov AA (ed) Growth of crystals, vol 11, Translated by J.E.S. Bradley. Consultants Bureau, New York, p 136Google Scholar