Journal of Materials Science

, Volume 42, Issue 12, pp 4125–4130 | Cite as

A novel method for massive fabrication of β-SiC nanowires

  • F. Li
  • G. WenEmail author


Silicon carbide nanowires (NWs), that were over 200 μm in length and 20–200 nm in diameter, were prepared by high-pressure reaction from SiBONC powder tablets. Annealing temperatures between 1,500 °C and 1,600 °C and Si/B molar ratios between 70:30 and 60:40 were suitable for the growth of the nanowires. The nanowires were fabricated by in situ chemical vapor growth process on the tablets. The SiC nanowires were identified as single crystal β-SiC. The analysis of X-ray diffraction (XRD) and transmission electron microscopy (TEM) showed the single crystalline nature of nanowires with a growth direction of <111>. Massive growth of single crystalline SiC nanowires is important to meet the requirements of the fabrication of SiC nanowire-based nanodevices.


Select Area Electronic Diffraction Pattern Zinc Blend Powder Tablet Graphite Cylinder Boron Trichloride 



The authors would like to thank the financial support from the National Natural Science Foundation of China, No. 50472011.


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Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  1. 1.Harbin Institute of Technology, School of Materials Science & EngineeringHarbinChina
  2. 2.Harbin Institute of Technology at WeihaiWeihaiChina

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