The effect of annealing time on r.f. magnetron sputtered La3Ga5SiO14 films
La3Ga5SiO14 (LGS) thin films have been grown by r.f. sputtering at 600 °C on (200)-textured MgO buffer layers deposited also by r.f. sputtering on Si substrates. The evolution of crystalline phases in the thin films as a function of time was examined by X-ray diffraction and scanning electron microscopy before and after annealing in air for various times. The morphology of the crystals formed and their formation mechanism were discussed.
KeywordsAnnealing Time Surface Free Energy Ga2O3 Liquid Phase Epitaxy Increase Annealing Time
The authors express our thanks to W.-Y. Wei for discussion and advices. Financial support by National Science Council, Taiwan, the Republic of China under Contract No. NSC 92-2216-E-036-015 is gratefully acknowledged.
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