Journal of Materials Science

, Volume 41, Issue 8, pp 2327–2332 | Cite as

Photoconductivity in Thin Film of a-(Ge20Se80)0.90Sn0.10

  • A. Thakur
  • V. Sharma
  • P. S. Chandel
  • N. Goyal
  • G. S. S. Saini
  • S. K. Tripathi


Steady state and transient photoconductivity measurements have been done on thin film of a-(Ge20Se80)0.90Sn0.10 as a function of temperature and intensity. Dark conductivity (σd) and photoconductivity (\(\sigma_{\rm ph}\)) measurements show that the conduction in this glass is through an activated process having single activation energy in the temperature range 283–350 K. The intensity dependence of steady state photoconductivity (\(\sigma_{\rm ph}\)) follows a power law with intensity (F), \(\sigma_{\rm ph} \propto F^{\gamma}\), where the power γ has been found between 0.5 and 1.0, suggesting bimolecular recombination. Rise and decay of photocurrent at different temperatures and intensities show that photocurrent (Iph) rises monotonically to the steady state value and the decay of photocurrent is quite slow. A detailed analysis of photoconductive decay shows that the recombination within localized states may be predominant recombination mechanism in this glassy alloy.


Polymer Thin Film Steady State Activation Energy Recombination 
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Copyright information

© Springer Science + Business Media, Inc. 2006

Authors and Affiliations

  • A. Thakur
    • 1
  • V. Sharma
    • 1
  • P. S. Chandel
    • 1
  • N. Goyal
    • 1
  • G. S. S. Saini
    • 1
  • S. K. Tripathi
    • 1
  1. 1.Centre of Advanced Study in PhysicsPanjab UniversityChandigarhIndia

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