Proximity-effect correction in electron-beam lithography on metal multi-layers
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We report a proximity-effect correction in electron beam patterning when fabricating a spin valve device with a junction size of 100 nm × 100 nm. Since the spin valve device has a stack of magnetic/non-magnetic/magnetic metal multi-layers on oxidized Si substrate, its proximity effect should be appropriately corrected to realize a nano-scale junction. ZEP 520A was chosen as an electron beam resist because its dry-etching resistance is high enough to serve as an etching mask in the post-process. A set of proximity parameters, α, β, and η of ZEP 520A coated metal multi-layers was evaluated by using the doughnut pattern method. A simulation was carried out based on given proximity parameters in order to obtain effective dose factors of each segment of the exposure pattern. The junction with a desired shape and size on a metal multi-layer was successfully fabricated with a help of efficient proximity-effect correction.
KeywordsPMMA Proximity Effect Spin Valve Etching Mask Passivation Area
This work was supported by “the Korea Institutional Program in KIST.”
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