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Journal of Materials Science

, Volume 42, Issue 13, pp 5159–5164 | Cite as

Proximity-effect correction in electron-beam lithography on metal multi-layers

  • Hyunjung Yi
  • Joonyeon Chang
Article

Abstract

We report a proximity-effect correction in electron beam patterning when fabricating a spin valve device with a junction size of 100 nm × 100 nm. Since the spin valve device has a stack of magnetic/non-magnetic/magnetic metal multi-layers on oxidized Si substrate, its proximity effect should be appropriately corrected to realize a nano-scale junction. ZEP 520A was chosen as an electron beam resist because its dry-etching resistance is high enough to serve as an etching mask in the post-process. A set of proximity parameters, α, β, and η of ZEP 520A coated metal multi-layers was evaluated by using the doughnut pattern method. A simulation was carried out based on given proximity parameters in order to obtain effective dose factors of each segment of the exposure pattern. The junction with a desired shape and size on a metal multi-layer was successfully fabricated with a help of efficient proximity-effect correction.

Keywords

PMMA Proximity Effect Spin Valve Etching Mask Passivation Area 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgement

This work was supported by “the Korea Institutional Program in KIST.”

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Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  1. 1.Center for Spintronics Research, Nano-Science Research DivisionKorea Institute of Science and TechnologySeoulKorea

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