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Epitaxial growth of ZnO films on (100) and (001) γ-LiAlO2 substrates by pulsed laser deposition

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Abstract

Structural and optical properties were investigated for ZnO films grown on (100) and (001) γ-LiAlO2 (LAO) substrates by pulsed laser deposition method. According XRD results, it is intuitionistic that (100) LAO is suitable for fabricating high quality ZnO film, while (001) LAO is unsuitable. The FWHM of XRD, stress in film and FWHM of UV PL spectra for ZnO films on (100) LAO show a decreasing with increasing substrate temperature from 300 to 600 °C. ZnO film fabricated at 600 °C has the greatest grain size, the smallest stress (0.47 Gpa) and PL FWHM value (∼85 meV). This means that the substrate temperature of 600 °C is optimum for ZnO film deposited on (100) LAO. Moreover, it was found that the UV PL spectra intensity of ZnO film is not only related to the grain size and stoichiometric, but also depends on the stress in the film.

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Acknowledgements

This work was supported by the program of “Hundreds of Talents” of CAS and the national “863” project (2004AA311080).

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Authors and Affiliations

  1. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China

    Jun Zou, Shengming Zhou & Jun Xu

  2. Graduate school of Chinese Academy of Science, Beijing, 100039, China

    Jun Zou & Xia Zhang

  3. Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, 200050, China

    Xia Zhang & Xiaomin Li

  4. Department of Physics, Nanjing University, Nanjing, 210093, China

    Zili Xie, Ping Han & Rong Zhang

Authors
  1. Jun Zou
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  2. Shengming Zhou
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  3. Jun Xu
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  4. Xia Zhang
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  5. Xiaomin Li
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  6. Zili Xie
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Correspondence to Jun Zou or Shengming Zhou.

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Zou, J., Zhou, S., Xu, J. et al. Epitaxial growth of ZnO films on (100) and (001) γ-LiAlO2 substrates by pulsed laser deposition. J Mater Sci 41, 5937–5940 (2006). https://doi.org/10.1007/s10853-006-0259-5

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  • DOI: https://doi.org/10.1007/s10853-006-0259-5

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