Journal of Materials Science

, Volume 41, Issue 17, pp 5709–5711 | Cite as

A simple approach to oxide varistor materials

  • A. B. Glot

Non-Ohmic conduction is observed in many oxide ceramic semiconductor materials on the basis of ZnO [1], TiO2 [2] and SnO2 [3, 4]. These ceramics are used as varistors—semiconductor devices with nonlinear symmetric current-voltage characteristic (CVC). Varistor ceramics consist of highly conductive grains with grain-boundary potential barriers formed during sintering [1, 2, 3, 4, 5]. Non-Ohmic conduction in ZnO varistors is explained by thermionic emission enhanced by barrier lowering at low fields with a combination of other mechanisms at high fields [5, 6, 7, 8].

However, in spite of a deep understanding of varistor action [ 5, 6, 7, 8, 9, 10], there is no simple analytical expression of CVC related to the mechanism of non-Ohmic conduction. Instead of that the empirical power-law relation
$$ j = BE^\beta , $$


SnO2 Co3O4 Barrier Height Bi2O3 Sb2O3 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  1. 1.División de Estudios de PosgradoUniversidad Tecnológica de la MixtecaOaxacaMéxico

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