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Influence of the polymer dielectric characteristics on the performance of a quaterthiophene organic field-effect transistor

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An Erratum to this article was published on 12 January 2006

Abstract

Organic field-effect transistors were fabricated with quaterthiophene as the active material and various polymeric dielectrics as the gate insulator. The conduction parameters such as mobility, threshold voltage, subthreshold swing, the maximum density of surface states etc. were found out. The performances of the devices were compared with respect to the dielectric constant, thickness and surface morphology of the gate insulator and the leakage current through the gate. Out of the three dielectrics investigated viz. parylene-C, cyanoethylpullulan and poly(methylmethacrylate); parylene-C was found to be best suited for applications in organic FETs.

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Correspondence to K. N. Narayanan Unni.

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An erratum to this article is available at https://doi.org/10.1007/s10853-006-7549-9.

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Unni, K.N.N., Dabos-Seignon, S. & Nunzi, JM. Influence of the polymer dielectric characteristics on the performance of a quaterthiophene organic field-effect transistor. J Mater Sci 41, 317–322 (2006). https://doi.org/10.1007/s10853-005-2331-y

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  • DOI: https://doi.org/10.1007/s10853-005-2331-y

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