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Journal of Electronic Testing

, Volume 33, Issue 5, pp 669–674 | Cite as

Novel Method for Nondestructive Body Effect Measurement in Dynamic Random Access Memory

  • Ilwoo Jung
  • Bonggu Sung
  • Byoungdeog Choi
Article
  • 102 Downloads

Abstract

Body effect is a key characteristic of a dynamic random access memory (DRAM) cell transistor. The conventional method uses a test element structure or nano-probe equipment for body effect measurements. However, the test element structure measurement is inaccurate because the structure is located outside the DRAM chip. Additionally, the nano-probe destroys the chip while measuring the body effect in the chip. Therefore, we developed a novel nondestructive method to measure the body effect in the DRAM. This method uses a memory bitmap test system. The test system was originally a device that determines pass or fail of the cells. However, it was modified to extract the gate voltage that causes the failure due to a cell transistor leakage current. Because the leakage current is correlated to the threshold voltage, this gate voltage is a relative threshold voltage. The body effect was obtained by measuring the relative threshold voltage under different body biases. After confirming the method in a single cell, we simplified the method for a mass cell measurement. Two relative threshold voltages for each body bias were used for a fast and simple test. The mass measurement method could obtain 8196 body cell effects within 2 min. The results of the newly developed method were the same as that of the conventional test element structure measurement.

Keywords

DRAM Nondestructive test Threshold voltage Body effect Bitmap test system 

Notes

Acknowledgements

This work was supported by the National Research Foundation of Korea(NRF) grant funded by the Korea government (MSIP) [grant number NRF-2016R1D1A1B03931349].

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Copyright information

© Springer Science+Business Media, LLC 2017

Authors and Affiliations

  1. 1.DRAM Product & TechnologyMemory Business, Samsung Electronics CompanyHwaseong-siSouth Korea
  2. 2.College of Information and Communication EngineeringSungkyunkwan UniversitySuwon-siSouth Korea

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