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Effect of BiScO3 doping on the structure and properties of BiFeO3-BaTiO3 piezoelectric ceramics

  • Shibo Guan
  • Huabin YangEmail author
  • Guiwu Liu
  • Guanjun Qiao
  • RuiZhang
  • Dedong Chen
  • Minhong Jiang
  • Yuanyuan Sun
Article
  • 51 Downloads

Abstract

High temperature lead-free piezoelectric ceramics 0.67BiFeO3–0.33BaTiO3 doped with 0.35 mol% MnO2 and xBiScO3 (x = 0, 0.005, 0.01, 0.015, 0.02) were prepared by conventional solid-state sintering method. The effects of BiScO3 doping on the crystal structure, piezoelectric, ferroelectric and dielectric properties of BiFeO3-BaTiO3 piezoelectric ceramics were investigated. The results show that the BiScO3 doping can not change the crystal structure of the ceramics and the grain size of ceramics increases first and then decreases with the BiScO3 doping content increasing. The optimum piezoelectric properties d33 = 165 pC/N, kp = 0.349 and Qm = 52.132 were obtained when x = 0.01, with the highest remanent polarization Pr = 37.1 μC/cm2. The ceramics become normal ferroelectrics determined by temperature spectrum with the increase of x, and the Curie temperature and depolarization temperature of 425 and 408 °C are respectively obtained when x = 0.01. In particular, a small amount of BiScO3 doping is beneficial to the improvement of the temperature stability. Moreover, a perovskite solid solution forms between the BiScO3 and BiFeO3-BaTiO3 ceramics, which can improve the electrical properties of BF-BT ceramic system.

Keywords

BiFeO3-BaTiO3 BiScO3 Lead-free piezoelectric ceramics Temperature stability 

Notes

Acknowledgements

This work was supported by the National Natural Science Foundation of China (11364008), Natural Science Foundation of Guangxi (2014GXNSFAA118311) and Guangxi Key Laboratory of Information Materials.

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© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.School of Materials Science and EngineeringJiangsu UniversityZhenjiangPeople’s Republic of China
  2. 2.School of Material Science and EngineeringGuilin University of Electronic TechnologyGuilinPeople’s Republic of China

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