Journal of Electroceramics

, Volume 35, Issue 1–4, pp 141–147 | Cite as

Structural and electrical characterizations of ZnO:In/PS/Si heterojunction deposited by rf-magnetron sputtering

  • H. Belaid
  • M. Nouiri
  • A. Sayari
  • Z. Ben Ayadi
  • K. Djessas
  • L. El Mir


Indium doped zinc oxide (IZO) thin film has been deposited on p-type porous silicon (PS) substrate by rf-magnetron sputtering of IZO aerogel nanoparticles at room temperature to obtain n-IZO/PS/p-Si heterojunction diode. The obtained IZO film, with a thickness of about 400 nm using indium concentration of 4 at.%, was polycrystalline with a hexagonal wurtzite structure and preferentially orientation in the (002) crystallographic direction. Atomic force microscopy (AFM) micrograph shows that IZO film has a typical columnar structure and a very smooth surface. The heterojunction parameters were evaluated from the current-voltage (I-V) characteristics carried out in the temperature range 80–300 K and capacitance-voltage (C-V) measurements. The ideality factor and barrier height of the heterojunction exhibited strong temperature dependence. The electrical measurements show that the n-IZO/PS/p-Si heterojunction has a Schottky electronic behavior where the depletion-layer is developed principally in the p-type silicon substrate. The tunneling mechanism via deep-level states was the main conduction process at low forward bias, while space-charge-limited current conduction dominated the carrier transport at higher bias. The I-V characteristics under illumination show that the p-n junction exhibits a photovoltaic behavior and is promising for photovoltaic application.


Nanostructure ZnO:In Porous silicon Solar cell Sol-gel Sputtering 


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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  1. 1.Laboratory of Physics of Materials and Nanomaterials Applied at Environment (LaPhyMNE)Faculty of Sciences Gabes, Gabes UniversityGabesTunisia
  2. 2.Department of Physics, Faculty of ScienceUniversity of JeddahJeddahKingdom of Saudi Arabia
  3. 3.Equipe de Spectroscopie Raman, Département de PhysiqueFaculté des Sciences de TunisTunisTunisie
  4. 4.Laboratoire Procédés, Matériaux et Énergie Solaire (PROMES-CNRS)Université de Perpignan, Rambla de la thermodynamiquePerpignan CedexFrance
  5. 5.College of Sciences, Department of PhysicsAl Imam Mohammad Ibn Saud Islamic University (IMSIU)RiyadhKingdom of Saudi Arabia

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