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Structural and electrical characterizations of ZnO:In/PS/Si heterojunction deposited by rf-magnetron sputtering

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Abstract

Indium doped zinc oxide (IZO) thin film has been deposited on p-type porous silicon (PS) substrate by rf-magnetron sputtering of IZO aerogel nanoparticles at room temperature to obtain n-IZO/PS/p-Si heterojunction diode. The obtained IZO film, with a thickness of about 400 nm using indium concentration of 4 at.%, was polycrystalline with a hexagonal wurtzite structure and preferentially orientation in the (002) crystallographic direction. Atomic force microscopy (AFM) micrograph shows that IZO film has a typical columnar structure and a very smooth surface. The heterojunction parameters were evaluated from the current-voltage (I-V) characteristics carried out in the temperature range 80–300 K and capacitance-voltage (C-V) measurements. The ideality factor and barrier height of the heterojunction exhibited strong temperature dependence. The electrical measurements show that the n-IZO/PS/p-Si heterojunction has a Schottky electronic behavior where the depletion-layer is developed principally in the p-type silicon substrate. The tunneling mechanism via deep-level states was the main conduction process at low forward bias, while space-charge-limited current conduction dominated the carrier transport at higher bias. The I-V characteristics under illumination show that the p-n junction exhibits a photovoltaic behavior and is promising for photovoltaic application.

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Authors and Affiliations

  1. Laboratory of Physics of Materials and Nanomaterials Applied at Environment (LaPhyMNE), Faculty of Sciences Gabes, Gabes University, Gabes, Tunisia

    H. Belaid, M. Nouiri, Z. Ben Ayadi & L. El Mir

  2. Department of Physics, Faculty of Science, University of Jeddah, P.O. Box 80203, Jeddah, 21589, Kingdom of Saudi Arabia

    A. Sayari

  3. Equipe de Spectroscopie Raman, Département de Physique, Faculté des Sciences de Tunis, Campus Universitaire, El-Manar, 2092, Tunis, Tunisie

    A. Sayari

  4. Laboratoire Procédés, Matériaux et Énergie Solaire (PROMES-CNRS), Université de Perpignan, Rambla de la thermodynamique, Tecnosud, 66100, Perpignan Cedex, France

    K. Djessas

  5. College of Sciences, Department of Physics, Al Imam Mohammad Ibn Saud Islamic University (IMSIU), Riyadh, 11623, Kingdom of Saudi Arabia

    L. El Mir

Authors
  1. H. Belaid
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  2. M. Nouiri
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  3. A. Sayari
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  4. Z. Ben Ayadi
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  5. K. Djessas
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  6. L. El Mir
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Correspondence to A. Sayari or L. El Mir.

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Belaid, H., Nouiri, M., Sayari, A. et al. Structural and electrical characterizations of ZnO:In/PS/Si heterojunction deposited by rf-magnetron sputtering. J Electroceram 35, 141–147 (2015). https://doi.org/10.1007/s10832-015-0006-x

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  • DOI: https://doi.org/10.1007/s10832-015-0006-x

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