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Growth characteristics and film properties of gallium doped zinc oxide prepared by atomic layer deposition

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Abstract

We carried out comprehensive studies on structural, optical, and electrical properties of gallium-doped zinc oxide (Ga:ZnO) films deposited by atomic layer deposition (ALD). The gallium(III) isopropoxide (GTIP) was used as a Ga precursor, which showed pure Ga2O3 thin film with high growth rate. Using this precursor, conductive Ga doped ZnO thin film can be successfully deposited. The electrical, structural and optical properties were systematically investigated as functions of the Ga doping contents and deposition temperature. The best carrier concentration and transmittance (7.2 × 1020 cm−3 and 83.5 %) with low resistivity (≈3.5 × 10−3 Ωcm) were observed at 5 at.% Ga doping concentration deposited at 250 °C. Also, low correlation of deposition temperature with the carrier concentration and film structure was observed. This can be explained by the almost same atomic radius of Ga and Zn atom.

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Acknowledgment

This work was partially supported from the collaborative R&D program with technology advanced country “Development of materials and stacked device structure for next generation solar cells, 2010-advanced-B-105” by MKE. In addition, the work was supported by the IT R&D program of MKE/KEIT (Grant No. 10041416, the core technology development of light and space adaptable new mode display for energy saving on 7 in. and 2 W).

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Authors and Affiliations

  1. Division of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA

    W. J. Maeng

  2. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 133-791, Republic of Korea

    Jin-Seong Park

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  1. W. J. Maeng
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Correspondence to Jin-Seong Park.

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Maeng, W.J., Park, JS. Growth characteristics and film properties of gallium doped zinc oxide prepared by atomic layer deposition. J Electroceram 31, 338–344 (2013). https://doi.org/10.1007/s10832-013-9848-2

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