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Structural and improved electrical properties of rare earth (Sm, Tb and Ho) doped BiFe0.975Mn0.025O3 thin films

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Abstract

Pure BiFeO3 (BFO) and rare earth (RE) ion co-doped (Bi0.9RE0.1)(Fe0.975Mn0.025)O3 (RE = Sm, Tb and Ho, denoted by BSFM, BTFM and BHFM) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Formations of distorted rhombohedral perovskite structure for the thin films were confirmed by using an X-ray diffraction and a Raman scattering analysis. Microstructural features for the thin films were examined by using a scanning electron microscopic analysis. Among the thin films, the lowest leakage current density of 1.22 × 10−6 A/cm2 (at 100 kV/cm), large remnant polarization (2Pr) of 72.4 μC/cm2 and low coercive field (2E c ) of 689 kV/cm (at 980 kV/cm) were measured for the BTFM thin film.

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Acknowledgments

This work was supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010–0029634).

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Authors and Affiliations

  1. Department of Physics, Changwon National University, Changwon, Gyeongnam, 641-773, Republic of Korea

    C. M. Raghavan, J. W. Kim & S. S. Kim

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  1. C. M. Raghavan
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  2. J. W. Kim
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  3. S. S. Kim
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Correspondence to S. S. Kim.

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Raghavan, C.M., Kim, J.W. & Kim, S.S. Structural and improved electrical properties of rare earth (Sm, Tb and Ho) doped BiFe0.975Mn0.025O3 thin films. J Electroceram 31, 275–279 (2013). https://doi.org/10.1007/s10832-013-9797-9

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  • DOI: https://doi.org/10.1007/s10832-013-9797-9

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