Journal of Electroceramics

, Volume 28, Issue 1, pp 74–79 | Cite as

Characteristics of short-channel amorphous In-Ga-Zn-O thin film transistors and their circuit performance as a load inverter

  • Jin-Seong Park


The characteristics of amorphous In-Ga-Zn-O(IGZO) thin film transistors (TFTs) and load inverters with a short channel length were studied. The IGZO TFTs showed a mobility value of > 5 cm2/Vs with a Vth value of -1.62 V. No degradation of the TFT properties, such as a negative shift of Vth or degradation of the subthreshold slope by the short-channel effect, were observed down to a channel length of 2 μm. A load inverter using an IGZO TFT with a gate length of 2 μm and resistor of 1 MΩ was fabricated and characterized, and a voltage gain of 4 was obtained at a VDD value of 10 V. Additionally, the action of a dynamic inverter operating at frequencies of 1 and 10 kHz was characterized. Complete inverter action was obtained at 1 kHz, while an delay time of 0.53 μs was observed at 10 kHz. These promising results indicate that short channel IGZO TFTs are candidate for TFTs in the display industry, including active-matrix organic light-emitting diodes or multi-view three-dimension TV.


InGaZnO Oxide thin film transistor Short channel Load invertor 


  1. 1.
    Park, J. S., Maeng, W. J., Kim, H. S., and Park, J. -S., Thin Solid Films, doi: 10.1016/j.tsf.2011.07.018
  2. 2.
    J.Y. Kwon, K.S. Son, J.S. Jung, T.S. Kim, M.K. Ryu, K.B. Park, B.W. Yoo, J.W. Kim, Y.G. Lee, K.C. Park, S.Y. Lee, J.M. Kim, Electron Device Letters. IEEE 29, 1309 (2008)Google Scholar
  3. 3.
    J.S. Park, T.S. Kim, K.S. Son, K.H. Lee, W.J. Maeng, H.S. Kim, E.S. Kim, K.B. Park, J.B. Seon, W. Choi, M.K. Ryu, S.Y. Lee, Applied Physics Letters 96, 262109 (2010)CrossRefGoogle Scholar
  4. 4.
    J.K. Jeong, H.W. Yang, J.H. Jeong, Y.G. Mo, H.D. Kim, Applied Physics Letters 93, 123508 (2008)CrossRefGoogle Scholar
  5. 5.
    Kim, S. I., Kim. C. J., Park, J. C., Song. I., Kim, S. W., & Yui, H., et al. (2008). Electron Devices Meeting, IEEE International, 1-4Google Scholar
  6. 6.
    J.-S. Park, K.S. Kim, Y.-G. Park, Y.G. Mo, H.D. Kim, J.K. Jeong, Advanced Materials 21, 329 (2009)CrossRefGoogle Scholar
  7. 7.
    I. Song, S. Kim, H. Yin, C.J. Kim, J. Park, S. Kim, E. Lee, S. Park, Electron Device Letters, IEEE 29, 549 (2008)CrossRefGoogle Scholar
  8. 8.
    H.-H. Hsieh, C.-C. Wu, Applied Physics Letters 89, 041109 (2006)CrossRefGoogle Scholar
  9. 9.
    J.-H. Park, J.-H. Kwon, S. Chang, H. Seo, B.-H. Choi, M.-J. Ji, J. Choi, J.J. Pak, B.-K. Ju, Thin Solid Films 518, 6264 (2010)CrossRefGoogle Scholar
  10. 10.
    M.S. Oh, D.K. Hwang, K. Lee, S. Im, S. Yi, Applied Physics Letters 90, 173511 (2007)CrossRefGoogle Scholar
  11. 11.
    R.E. Presley, D. Hong, H.Q. Chiang, C.M. Hung, R.L. Hoffman, J.F. Wager, Solid-State Electronics 50, 500 (2006)CrossRefGoogle Scholar
  12. 12.
    J.S. Park, T.S. Kim, K.S. Son, E. Lee, J.S. Jung, K.H. Lee, W.J. Maeng, H.S. Kim, E.S. Kim, K.B. Park, J.Y. Kwon, M.K. Ryu, S.Y. Lee, Applied Physics Letters 97, 162105 (2010)CrossRefGoogle Scholar
  13. 13.
    T.S. Kim, J.S. Park, K.S. Son, W.J. Maeng, H.S. Kim, M.K. Ryu, S.Y. Lee, Applied Physics Letters 98, 012107 (2011)CrossRefGoogle Scholar
  14. 14.
    I. Barin, F. Sauert, E.S. Rhonhof, Sheng, Thermochemical data of pure substances (Wiely, New York, 1989)Google Scholar
  15. 15.
    M. Kim, J.H. Jeong, H.J. Lee, T.K. Ahn, H.S. Shin, J.-S. Park, J.K. Jeong, Y.G. Mo, H.D. Kim, Applied Physics Letters 90, 212114 (2007)CrossRefGoogle Scholar
  16. 16.
    S.H. Kim, J.H. Hur, K.M. Kim, J.H. Koo, J. Jang, Journal of Korean Physical Society 48, S80 (2006)Google Scholar
  17. 17.
    S.A. Campbell, H.S. Kim, D.C. Gilmer, B. He, T. Ma, W.L. Gladfelter, IBM Journal of Research and Developments 43, 383 (1999)CrossRefGoogle Scholar
  18. 18.
    D.H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.H. Lee, G.H. Kim, X.S. Li, G.S. Park, B. Lee, S. Han, M. Kim, C.S. Hwang, Nat Nano. 5, 148 (2010)CrossRefGoogle Scholar
  19. 19.
    J.S. Park, Journal of Electroceramics 25, 145 (2010)CrossRefGoogle Scholar
  20. 20.
    B.D. Ahn, H.S. Shin, H.J. Kim, J.-S. Park, J.K. Jeong, Applied Physics Letters 93, 203506 (2008)CrossRefGoogle Scholar
  21. 21.
    J.B. Kim, C. Fuentes-Hernandez, W.J. Potscavage Jr., X.-H. Zhang, B. Kippelen, Applied Physics Letters 94, 142107 (2009)CrossRefGoogle Scholar
  22. 22.
    K. Lee, J.H. Kim, S. Im, C.S. Kim, H.K. Baik, Applied Physics Letters 89, 133507 (2006)CrossRefGoogle Scholar
  23. 23.
    S.H. Chung, M.S. Oh, K.H. Lee, J.M. Choi, B.H. Lee, M.M. Sung, S. Im, Electron Device Letters, IEEE 29, 1145 (2008)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2012

Authors and Affiliations

  1. 1.Department of Materials Science and EngineeringDankook UniversityCheonanRepublic of Korea

Personalised recommendations