Advertisement

Journal of Electroceramics

, Volume 24, Issue 3, pp 153–160 | Cite as

Substrate effect on the electrical properties of sputtered YSZ thin films for co-planar SOFC applications

  • Sung Moon Kim
  • Ji-Won Son
  • Kyung-Ryul Lee
  • Hyoungchul Kim
  • Hae-Ryoung Kim
  • Hae-Weon Lee
  • Jong-Ho Lee
Article

Abstract

The physical and electrical properties of sputtered YSZ thin films on various substrates were investigated. The in-plane electrical properties of the films were measured for evaluating YSZ thin film for co-planar SOFC electrolytes. The conductance measured on YSZ over Si substrates was significantly affected by the buffer layer thickness and exhibited higher values than that of YSZ on sapphire. This indicates that electrical leakage occurred through the substrate when Si substrates were utilized. Nevertheless, pure ionic conduction was observed in YSZ/sapphire regardless of the film thickness. It implies that much care should be taken for the selection of substrate materials in measuring or utilizing in-plane conductivity, especially for high temperature applications.

Keywords

YSZ thin film Sputtering Electrical conductivity Substrate effect Co-planar SOFC 

Notes

Acknowledgment

This work has been supported by the Institutional Research Program and NRL Program of Korea Institute of Science and Technology (KIST).

References

  1. 1.
    J.L. Hertz, H.L. Tuller, J. Electroceramics 13, 663 (2004)CrossRefGoogle Scholar
  2. 2.
    J. Fleig, H.L. Tuller, J. Maier, Solid State Ion. 174, 261 (2004). doi: 10.1016/j.ssi.2004.07.035 CrossRefGoogle Scholar
  3. 3.
    A. Bieberle-Hutter et al., J. Power Sources 177, 123 (2008). doi: 10.1016/j.jpowsour.2007.10.092 CrossRefGoogle Scholar
  4. 4.
    R. O’Hayre, Ph.D. Dissertation, Stanford University (2004)Google Scholar
  5. 5.
    L.R. Pederson, P. Singh, X.-D. Zhou, Vacuum 80, 1066 (2006). doi: 10.1016/j.vacuum.2006.01.072 CrossRefGoogle Scholar
  6. 6.
    I. Kosacki, T. Suzuki, V. Petrovsky, H.U. Anderson, Solid State Ion 136137, 1225 (2000). doi: 10.1016/S0167-2738(00)00591-9 CrossRefGoogle Scholar
  7. 7.
    I. Kosacki, C. Rouleau, P.F. Becher, J. Bentley, D.H. Lowndes, Solid State Ion. 176, 1319 (2005). doi: 10.1016/j.ssi.2005.02.021 CrossRefGoogle Scholar
  8. 8.
    J.H. Joo, G.M. Choi, Solid State Ion. 177, 1053 (2006). doi: 10.1016/j.ssi.2006.04.008 CrossRefGoogle Scholar
  9. 9.
    A. Karthikeyan, C. Chang, S. Ramanathan, Appl. Phys. Lett. 89, 183116 (2006). doi: 10.1063/1.2385211 CrossRefADSGoogle Scholar
  10. 10.
    H.L. Tuller, Solid State Ion. 131, 143 (2000). doi: 10.1016/S0167-2738(00)00629-9 CrossRefADSGoogle Scholar
  11. 11.
    L.C. De Jonghe, C.P. Jacobson, S.J. Visco, Annu. Rev. Mater. Res. 33, 169 (2003). doi: 10.1146/annurev.matsci.33.041202.103842 CrossRefADSGoogle Scholar
  12. 12.
    B. Hobein, F. Tietz, D. Stover, M. Cekada, P. Panjan, J. Eur. Ceram. Soc. 21, 1843 (2001). doi: 10.1016/S0955-2219(01)00127-3 CrossRefGoogle Scholar
  13. 13.
    H. Huang, M. Nakamura, P. Su, R. Fasching, Y. Saito, F.B. Prinz, J. Electrochem. Soc. 154, B20 (2007). doi: 10.1149/1.2372592 CrossRefGoogle Scholar
  14. 14.
    T. Hibino, K. Ushiki, Y. Kuwahara, Solid State Ion. 91, 69 (1996). doi: 10.1016/S0167-2738(96)00437-7 CrossRefGoogle Scholar
  15. 15.
    M. Yano, A. Tomita, M. Sano, T. Hibino, Solid State Ion. 177, 3351 (2007). doi: 10.1016/j.ssi.2006.10.014 CrossRefGoogle Scholar
  16. 16.
    Z. Shao, S.M. Haile, J. Ahn, P.D. Ronney, Z. Zhan, S.A. Barnett, Nature 435, 795 (2005). doi: 10.1038/nature03673 CrossRefPubMedADSGoogle Scholar
  17. 17.
    Z.W. Zhang, S. Jin, Y. Yang, G.B. Li, S.J. Tian, J.T. Jia et al., Appl. Phys. Lett. 77(21), 3409 (2000). doi: 10.1063/1.1328099 CrossRefADSGoogle Scholar
  18. 18.
    A. Bieberle-Hütter, M. Søgaard, H.L. Tuller, Solid State Ion. 177, 1969 (2006). doi: 10.1016/j.ssi.2006.06.017 CrossRefGoogle Scholar
  19. 19.
    A. Bieberle-Hütter, J.L. Hertz, H.L. Tuller, Acta Mater. 56, 177 (2008). doi: 10.1016/j.actamat.2007.09.006 CrossRefGoogle Scholar
  20. 20.
    M.N. Horenstein, Microelectronic Circuits and Devices (Prentice Hall, New Jersey, 1996), p. 426Google Scholar
  21. 21.
    G.V. Samsonov (ed.), The Oxide Handbook (IFI/Plenum, New York, 1982), p 202Google Scholar
  22. 22.
    J.L. Hertz, H.L. Tuller, Solid State Ion. 178, 915 (2007). doi: 10.1016/j.ssi.2007.04.003 CrossRefADSGoogle Scholar
  23. 23.
    J. Kim, R.N. Blumenthal, J. Electrochem. Soc. 136(10), 2867 (1989). doi: 10.1149/1.2096302 CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  • Sung Moon Kim
    • 1
  • Ji-Won Son
    • 1
  • Kyung-Ryul Lee
    • 1
  • Hyoungchul Kim
    • 1
  • Hae-Ryoung Kim
    • 1
  • Hae-Weon Lee
    • 1
  • Jong-Ho Lee
    • 1
  1. 1.Center for Energy Materials ResearchKorea Institute of Science and TechnologySeoulKorea

Personalised recommendations