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Electrical, optical, and structural properties of ITO co-sputtered IZO films by dual target magnetron sputtering

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Abstract

We have investigated electrical, optical, and structural properties of indium tin oxide (ITO) co-sputtered indium zinc oxide (IZO) film prepared by a dual target direct current (DC) magnetron sputtering at room temperature in pure Ar ambient. It was shown that the resistivity and sheet resistance of ITO co-sputtered IZO films monotonically increased with increasing DC power of ITO target at constant DC power of IZO target. Synchrotron X-ray scattering and scanning electron microscope examination results show that addition of ITO in the IZO film lead to crystallization of IZTO film due to low transition temperature of the ITO from amorphous to crystalline. However, ITO co-sputtered IZO film (ITO/IZO power = 100 W:100 W) exhibit higher work function than those of pure IZO and ITO film. It was found that the work function as well as the electrical, optical, and surface properties of the IZTO film could be controlled by varying the DC power of IZO and ITO targets, respectively.

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Acknowledgement

This work was supported by Korea Research Foundation Grant funded by Korea Government (MOEHRD: Basic Research Promotion Fund) (KRF-2006-331-D00243).

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Authors and Affiliations

  1. School of Advanced Materials and Systems Engineering, Kumoh National Institute of Technology (KIT), 1 Yangho-dong, Gumi, Gyeongbuk, 730-701, South Korea

    Jin-A Jeong, Kwang-Hyuk Choi, Jung-Hyeok Bae, Jong-Min Moon, Soon Wook Jeong, Insoo Kim & Han-Ki Kim

  2. Department of Materials Science and Engineering, Kyoungbuk National University, Sangju, Gyeongbuk, 742-711, South Korea

    Min-Su Yi

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  1. Jin-A Jeong
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  2. Kwang-Hyuk Choi
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  4. Jong-Min Moon
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  5. Soon Wook Jeong
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  6. Insoo Kim
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  7. Han-Ki Kim
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Correspondence to Han-Ki Kim.

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Jeong, JA., Choi, KH., Bae, JH. et al. Electrical, optical, and structural properties of ITO co-sputtered IZO films by dual target magnetron sputtering. J Electroceram 23, 361–366 (2009). https://doi.org/10.1007/s10832-008-9468-4

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  • DOI: https://doi.org/10.1007/s10832-008-9468-4

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