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Depth-dependence of electromechanical properties in a thick 0.7Pb(Mg1/3(Nb0.9Ta0.1)2/3)O3–0.3pbtio3 ceramic disk

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Abstract

A thick ceramic disk of 0.7Pb(Mg1/3(Nb0.9Ta0.1)2/3)O3–0.3PbTiO3 (PMNT–PT) was prepared by columbite precursor method with PbO powder buffer surrounding the disk during the sintering process. The Electromechanical properties and the microstructure of PMNT–PT samples cut from the different depths of the disk are studied. Although the phase purity is homogenous in the whole disk, the middle sample has higher electric field induced strain. Electric field of 14 kV/cm induced strain 0.14% was found. It is believed that the prepared processes, especially the Pb volatilization is responsible for these results.

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Acknowledgements

This work is supported by Office of Naval Research, US Navy, research grant N00014-02-1-0275.

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Correspondence to J. T. Wang.

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Zhang, C., Shen, S.X., Feng, Y. et al. Depth-dependence of electromechanical properties in a thick 0.7Pb(Mg1/3(Nb0.9Ta0.1)2/3)O3–0.3pbtio3 ceramic disk. J Electroceram 21, 637–640 (2008). https://doi.org/10.1007/s10832-007-9279-z

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  • DOI: https://doi.org/10.1007/s10832-007-9279-z

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