Effect of seed layers on dielectric properties of Ba(Zr0.3Ti0.7)O3 thin films
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The Barium zirconium titanate Ba(Zr0.3Ti0.7)O3 thin films were prepared on Pt/Ti/SiO2/Si substrates with seed layers at the BZT/Pt interface by sol–gel process. Microstructure and structure of thin films were examined. Dielectric properties of thin films with various seed layers thicknesses were investigated as a function of frequency and direct current electric field. The tunability and dielectric constant of BZT thin films increased with increasing seed layer thickness from 0 to 20 nm, while it decreased with a further increase in thickness above 20 nm, meanwhile, the leakage current showed the similar tendency at applied electric field of 250 kV/cm. The optimized seed layer thickness for BZT thin films plays an important role in maintaining the high tunability and low leakage current, which are suitable for microwave device applications.
KeywordsBZT thin films Dielectric properties Seed layers
This research was supported by the Ministry of Sciences and Technology of China through 973-project under grant 2002CB613304, Shanghai Nano Fundamental Committee under Contract no. 05nm05028, Special Research Fund for the Doctoral Program of Higher Education (SRFDP20060247003) and Program for New Century Excellent Talents in University (NCET).
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