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The tunability and dielectric properties of the compositionally graded Ba(Zr x Ti1−x )O3 thin films

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Abstract

The compositionally graded Ba(Zr x Ti1−x )O3 films with a compositional gradient from BaTiO3 to BaZr0.35Ti0.65O3 were fabricated on LNO-buffered Pt/Ti/SiO2/Si substrates by a sol-gel deposition method. In order to confirm the compositional gradient, a combination of X-ray Photoelectron Spectroscopy (XPS) and Ar ion etching was employed to produce the composition depth profile. Dielectric constant peaks, common to a ferroelectric transition, were not observed in the temperature range from −50 to 100 °C, within which the dielectric constant showed negligible temperature dependence. The compositionally graded Ba(Zr x Ti1−x )O3 thin films with weak temperature dependence of tunability could be attractive materials for situations in which precise control of temperature would be either impossible or too expensive.

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Acknowledgements

This research was supported by the Ministry of Sciences and Technology of China through 973-project under grant 2002CB613304 and the Specialized Research Fund for the Doctoral Program of Higher Education. This research was also supported by Program for New Century Excellent Talents in University and Shanghai Pujiang Program.

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Authors and Affiliations

  1. Functional Materials Research Laboratory, Tongji University, Shanghai, 200092, People’s Republic of China

    Jiwei Zhai, Cheng Gao & Xi Yao

  2. Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong

    Zhengkui Xu & Haydn Chen

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  1. Jiwei Zhai
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  2. Cheng Gao
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  3. Xi Yao
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  4. Zhengkui Xu
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Correspondence to Jiwei Zhai.

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Zhai, J., Gao, C., Yao, X. et al. The tunability and dielectric properties of the compositionally graded Ba(Zr x Ti1−x )O3 thin films. J Electroceram 21, 12–16 (2008). https://doi.org/10.1007/s10832-007-9074-x

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  • DOI: https://doi.org/10.1007/s10832-007-9074-x

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