Skip to main content
SpringerLink
Log in

Growth and characterization of UHV sputtering HfO2 film by plasma oxidation and low temperature annealing

  • Section 2: Thin Film
  • Published:
Journal of Electroceramics Aims and scope Submit manuscript

Abstract

Ultra-thin (∼4.0 nm) HfO2 films were fabricated by plasma oxidation of sputtered metallic Hf films with post low temperature annealing. Advantage of this fabrication process is that the pre-deposition of Hf metal can suppress the formation of interfacial layer between HfO2 film and Si substrate. The as-deposited HfO2 films were subsequently treated by rapid thermal annealing at different temperatures in N2 to investigate the effects of thermal annealing on the physical and electrical properties of HfO2 film. A SiO2-rich interface layer was observed after higher temperature rapid thermal annealing and the phase change of HfO2 film from amorphous into crystalline occurred at about 700∘C. As a result of higher temperature annealing, effective dielectric constant and leakage current were significantly influenced by the formation of interface layer and the crystallization of HfO2 film.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. G.D. Wilk, R.M. Wallance, and J.M. Anthony, J. Appl. Phys., 89, 5243 (2001).

    Article  CAS  Google Scholar 

  2. M. Houssa, High-k Dielectrics (Institute of Physics, London, 2004).

    Google Scholar 

  3. M. Oshima, S. Toyoda, T. Okumura, J. Okabayashi, H. Kumigashira, K. Ono, M. Niwa, K. Usuda, and N. Hirashita, Appl. Phys. Lett., 83, 2172 (2003).

    Article  CAS  Google Scholar 

  4. M.H. Cho, Y.S. Roh, C.N. Whang, K. Jeong, S.W. Nahm, D.H. Ko, J.H. Lee, N.I. Lee, and K. Fujihara, Appl. Phys. Lett., 81, 472 (2002).

    Article  CAS  Google Scholar 

  5. S.J. Wang, P.C. Lim, A.C.H. Huan, C.L. Liu, J.W. Chai, S.Y. Chow, J.S. Pan, Q. Li, and C.K. Ong, Appl. Phys. Lett., 82, 2047 (2003).

    Article  CAS  Google Scholar 

  6. H. Harris, K. Choi, N. Mehta, A. Chandolu, N. Biswas, G. Kipshidze, S. Nikishin, S. Gangopadhyay, and H. Temkin, Appl. Phys. Lett., 81, 1065 (2002).

    Article  CAS  Google Scholar 

  7. S. Stemmer, J. Vac. Sci. Technol. B, 22, 791 (2004).

    Article  CAS  Google Scholar 

  8. P.S. Lysaght, B. Foran, G. Bersuker, P.J. Chen, R.W. Murto, and H.R. Huff, Appl. Phys. Lett., 82, 1266 (2003).

    Article  CAS  Google Scholar 

  9. R. Puthenkovilakam, Y.S. Lin, J. Choi, J. Lu, H.O. Blom, P. Pianetta, D. Devine, M. Sendler, and J.P. Chang, J. Appl. Phys., 97, 023704 (2005).

    Article  Google Scholar 

  10. K. Yamamoto, S. Hayashi, M. Niwa, M. Asai, S. Horii, and H. Miya, Appl. Phys. Lett., 83, 2229 (2003).

    Article  CAS  Google Scholar 

  11. R. Tan, Y. Azuma, and I. Kojima, Appl. Suf. Sci., 222, 346 (2004).

    Article  CAS  Google Scholar 

  12. S. Hayashi, K. Yamamoto, Y. Harada, R. Mitsuhashi, K. Eriguchi, M. Kubota, and M. Niwa, Appl. Surf. Sci., 216, 228 (2003).

    Article  CAS  Google Scholar 

  13. K. Seo, P.C. Mclntyre, H. Kim, and K.C. Saraswat, Appl. Phys. Lett., 86, 082904 (2005).

    Article  Google Scholar 

  14. J.C. Lee, S.J. Oh, M. Cho, C.S. Hwang, and R. Jung, Appl. Phys. Lett., 84, 1305 (2004).

    Article  CAS  Google Scholar 

  15. B.H. Lee, L. Kang, R. Nieh, W-J. Qi, and J.C. Lee, Appl. Phys. Lett., 76, 1926 (2000).

    Article  CAS  Google Scholar 

  16. V. Misra, G. Lucovsky, and G. Parsons, Mater. Res. Bull., 27, 212 (2002).

    CAS  Google Scholar 

  17. A. Callegari, E. Cartier, M. Gribelyuk, H.F. Okorn-Schmidt, and T. Zabel, J. Appl. Phys., 90, 6466 (2001).

    Article  CAS  Google Scholar 

  18. H. Wong, N. Zhan, K.L. Ng, M.C. Poon, and C.W. Kok, Thin Solid Films, 462, 96 (2004).

    Article  Google Scholar 

  19. R. Garg, N.A. Chowdhury, M. Bhaskaran, P.K. Swain, and D. Misra, J. Electrochem. Soc., 151, F215 (2004).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Physics, National University of Singapore, Singapore, 117542

    Q. Li & C. K. Ong

  2. Institute of Materials Research & Engineering, 3 Research Link, Singapore, 117602

    S. J. Wang, W. D. Wang, D. Z. Chi & A. C. H. Huan

  3. Division of Physics and Applied Physics, School of Physical and Mathematical Science, Nanyang Technological University, 1 Nanyang Walk, Singapore, 637616

    A. C. H. Huan

Authors
  1. Q. Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. J. Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. W. D. Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. D. Z. Chi
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. C. H. Huan
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. C. K. Ong
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to S. J. Wang.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Li, Q., Wang, S.J., Wang, W.D. et al. Growth and characterization of UHV sputtering HfO2 film by plasma oxidation and low temperature annealing. J Electroceram 16, 517–521 (2006). https://doi.org/10.1007/s10832-006-9909-x

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10832-006-9909-x

Keywords

Search

Navigation