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Journal of Electroceramics

, Volume 17, Issue 2–4, pp 487–494 | Cite as

Strain tensor effects on SrTiO3 incipient ferroelectric phase transition

  • Wontae Chang
  • Jeffrey A. Bellotti
  • Steven W. Kirchoefer
  • Jeffrey M. Pond
1. Informatics: Dielectrics, Ferroelectrics, and Piezoelectrics

Abstract

Structural distortion of ferroelectric thin films caused by film strain has a strong impact on the microwave dielectric properties. SrTiO3 thin films epitaxially grown on (110) DyScO3 substrates using molecular beam epitaxy (MBE) are extremely strained (i.e., ∼1% in-plane tensional strain) from 3.905 Å of bulk SrTiO3. The room temperature dielectric constant and its tuning of the films are observed to be 6000 and 75% with an electric field of 1 V/μm, respectively. The control of strain in SrTiO3 provides a basis for room temperature tunable microwave applications by elevating its phase transition peak to room temperature. Also, a significant in-plane anisotropy in dielectric constant and tuning was observed in these SrTiO3 films. The observed in-plane anisotropic dielectric properties have been interpreted based on the phenomenological thermodynamics of film strain.

Keywords

SrTiO3 Microwave dielectric properties Tunable microwave applications Film strain 

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Copyright information

© Springer Science + Business Media, LLC 2006

Authors and Affiliations

  • Wontae Chang
    • 1
  • Jeffrey A. Bellotti
    • 1
  • Steven W. Kirchoefer
    • 1
  • Jeffrey M. Pond
    • 1
  1. 1.US Naval Research LaboratoryWashingtonUSA

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