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Ferroelectric Properties of Bi3.25Nd0.75Ti3O12 Thin Films Prepared by MOD Process

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Abstract

Ferroelectric Bi4 − xNd x Ti3O12(BNdT) thin films with the composition (x = 0.75) were prepared on Pt/Ti/SiO2/Si(100) substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to 650∘C and then the electrical and structural characteristics were investigated for the application of FRAM. Electrical properties such as dielectric constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at 650∘C was 56 μ C/cm2 at an applied voltage of 5 V. No fatigue was observed up to 8 × 1010 read/write switching cycles at a frequency of 1 MHz regardless of annealing temperatures.

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Authors and Affiliations

  1. Department of Materials Engineering, Chungbuk National University, 361-763, Cheongju, Chungbuk, Korea

    Kibeom Kim & Guneik Jang

  2. Department of Materials Engineering, Case Western Reserve University, OH, USA

    Changhoon Kim

  3. Department of Advanced Materials Engineering, Sungkunkwan University, Korea

    Daeho Yoon

Authors
  1. Kibeom Kim
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  2. Guneik Jang
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  3. Changhoon Kim
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  4. Daeho Yoon
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Correspondence to Guneik Jang.

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Kim, K., Jang, G., Kim, C. et al. Ferroelectric Properties of Bi3.25Nd0.75Ti3O12 Thin Films Prepared by MOD Process. J Electroceram 13, 77–81 (2004). https://doi.org/10.1007/s10832-004-5079-x

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  • DOI: https://doi.org/10.1007/s10832-004-5079-x

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