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Recent Developments on MOCVD of Ferroelectric Thin Films

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Abstract

Ferroelectric Pb(Zr, Ti)O3 thin films were fabricated by liquid delivery MOCVD using Pb(DPM)2, Ti(OiPr)2(DPM)2 and Zr(DIBM)4. The deposition rate of 12.3 nm/min was attained on 6-inch Pt/Ti/SiO2/Si wafers at 550∘C. The average and the deviation of twofold remanent polarization were 45.5 μ C/cm2 and ± 6.4%, respectively, over the 6-inch wafer. Step coverage was improved from 44% to 90% by decreasing deposition temperature from 550 to 400∘C although the deposition rate decreased by 60%. TiO2 nanoparticles diffused to the surface of platinum bottom electrodes were effective as a seed to obtain 111 preferential oriented PZT thin films at the deposition temperature of 550∘C. Iridium oxide bottom electrodes were reduced to metal ones by CO and/or H2 gases generated by decomposition of precursors. Oxide materials seem to be not the best as bottom electrodes in liquid delivery MOCVD. A cocktail source consisted of Pb(METHD)2, Ti(MPD)(METHD)2 and Zr(METHD)4 was also examined. PbPt x alloy phase existed in PZT films deposited at 500∘C was disappeared by post-annealing at 600∘C and the annealed film showed hysteresis properties with the 2P r of 56 μ C/cm2 and the 2E c of 181 kV/cm.

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References

  1. H. Takasu, J. Electroceramics, 4, 327 (2000).

    Google Scholar 

  2. Y. Horii, NIKKEI ELECTRONICS, 3rd March, 125 (2003) (in Japanese).

  3. N. Nagano, T. Mikawa, T. Kutsunai, S. Hayashi, T. Nasu, S. Natsume, T. Tatsunari, T. Ito, S. Goto, H. Yano, A. Noma, K. Nagahashi, T. Miki, M. Sakagami, Y. Izutsu, T. Nakakuma, H. Hirano, S. Iwanari, Y. Murakuki, K. Yamaoka, Y. Goho, Y. Judai, E. Fujii, and K. Sato, in 2003 Symposium on VLSI Tech. Dig. (Kyoto, Japan, 2003).

    Google Scholar 

  4. K. Oikawa, D. Takashima, S. Shiratake, K. Hoya, and O. Joachim, in 2003 Symposium on VLSI Tech. Dig. (Kyoto, Japan, 2003).

  5. S.R. Summerfelt, T.S. Moise, G. Xing, L. Colombo, T. Sakoda, S.R. Gilbert, A.L.S. Loke, S. Ma, L.A. Wills, R. Kavari, T. Hsu, J. Amano, S.T. Johnson, D.J. Vestcyk, M.W. Russell, S.M. Bilodeau, and P. van Buskirk, Appl. Phys. Lett., 79, 4004 (2001).

    Google Scholar 

  6. J.K. Lee, M.-S. Lee, S. Hong, W. Lee, Y.K. Lee, S. Shin, and Y. Park, Jpn. J. Appl. Phys., 41, 6690 (2002).

    Google Scholar 

  7. H. Fujisawa, K. Kita, M. Shimizu, and H. Niu, Jpn. J. Appl. Phys., 40, 5551 (2001).

    Google Scholar 

  8. M. Aratani, K. Nagashima, and H. Funakubo, Jpn. J. Appl. Phys., 40, 4126 (2001).

    Google Scholar 

  9. S.R. Summerfelt, T.S. Moise, G. Xing, L. Colombo, T. Sakoda, S.R. Gilbert, A.L.S. Loke, S. Ma, L.A. Wills, R. Kavari, T. Hsu, J. Amano, S.T. Johnson, D.J. Vestcyk, M.W. Russell, S.M. Bilodeau, and P. van Buskirk, Appl. Phys. Lett., 79, 4004 (2001).

    Google Scholar 

  10. J.K. Lee, M.-S. Lee, S. Hong, W. Lee, Y.K. Lee, S. Shin, and Y. Park, Jpn. J. Appl. Phys., 41 6690 (2002).

    Google Scholar 

  11. M. Shimizu, H. Fujisawa, M. Sugiyama, and T. Shiosaki, Jpn. J. Appl. Phys., 33, 5135 (1994).

    Google Scholar 

  12. M. Shimizu, S. Hyodo, H. Fujisawa, H. Niu, and T. Shiosaki, Jpn. J. Appl. Phys., 36, 5808 (1997).

    Google Scholar 

  13. T. Kawahara, M. Yamamuka, T. Makita, K. Tsutahara, A. Yuuki, K. Ono, and Y. Matsui, Jpn. J. Appl. Phys., 33, 5897 (1994).

    Google Scholar 

  14. M. Miyake, K. Lee, S. Okamura, and T. Shiosaki, Integrated Ferroelectrics, 36, 127 (2001).

    Google Scholar 

  15. M. Miyake, K. Lee, S. Kawasaki, Y. Ueda, S. Okamura, and T. Shiosaki, Jpn. J. Appl. Phys., 41, 241 (2002).

    Google Scholar 

  16. Y. Ueda, N. Abe, Y. Otani, M. Miyake, S. Okamura, and T. Shiosaki, Integrated Ferroelectrics, 46, 125 (2002).

    Google Scholar 

  17. Y. Otani, N. Abe, Y. Ueda, M. Miyake, S. Okamura, and T. Shiosaki, Integrated Ferroelectrics, 51, 63 (2003).

    Google Scholar 

  18. K. Saito, T. Kurosawa, T. Akai, T. Oikawa, and H. Funakubo, J. Appl. Phys., 93, 545 (2003).

    Google Scholar 

  19. H.R. Kim, S. Jeong, C.B. Jeon, O.S. Kwon, and C.S. Hwang, J. Mater. Res., 16, 3583 (2001).

    Google Scholar 

  20. N. Abe, Y. Otani, M. Miyake, M. Kurita, H. Takeda, S. Okamura, and T. Shiosaki, Jpn. J. Appl. Phys., 42, 2791 (2003).

    Google Scholar 

  21. T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Appl. Phys. Lett., 65, 1522 (1994).

    Google Scholar 

  22. C.B. Eom, R.B. Van Dover, J.M. Phillips, D.J. Werder, J.H. Marshall, C.H. Chen, R.J. Cava, and R.M. Fleming, Appl. Phys. Lett., 63, 2570 (1993).

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Authors and Affiliations

  1. Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma, Nara, 630-0192, Japan

    Yohei Otani, Soichiro Okamura & Tadashi Shiosaki

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  1. Yohei Otani
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  2. Soichiro Okamura
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  3. Tadashi Shiosaki
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Correspondence to Yohei Otani.

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Otani, Y., Okamura, S. & Shiosaki, T. Recent Developments on MOCVD of Ferroelectric Thin Films. J Electroceram 13, 15–22 (2004). https://doi.org/10.1007/s10832-004-5069-z

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  • DOI: https://doi.org/10.1007/s10832-004-5069-z

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