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Dual-chirality GAA-CNTFET-based SCPF-TCAM cell design for low power and high performance

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Abstract

Ternary content-addressable memory (TCAM) is a type of associative memory used in many applications for high-speed data searching. We present herein a gate-all-around (GAA) carbon nanotube field-effect transistor (CNTFET)-based self-controlled TCAM cell design with a precharge-free match line. We compare the power–delay product (PDP) and static noise margin between the GAA-CNTFET-based traditional and proposed TCAM cell designs at the 11-nm technology node with a supply voltage of 0.8 V. The simulations are performed using the Virtuoso tool for different parameter values with the Stanford University GAA-CNTFET model. The simulation results show that, compared with the traditional design, the proposed design exhibits a significant reduction in power by 51.30%, delay by 17.16%, and PDP by 59.66% for a chiral vector of (20, 16, 0) with two channels. It is observed that the best chirality for the proposed design is (14, 20, 0) for a single channel, but (16, 16, 0) and (20, 16, 0) for a dual channel in terms of power, delay, stability, and PDP.

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Authors and Affiliations

  1. VIT University, Vellore, 632014, India

    S. V. V. Satyanarayana, Singh Rohitkumar Shailendra, V. N. Ramakrishnan & Sridevi Sriadibhatla

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  1. S. V. V. Satyanarayana
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  2. Singh Rohitkumar Shailendra
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  3. V. N. Ramakrishnan
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  4. Sridevi Sriadibhatla
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Satyanarayana, S.V.V., Shailendra, S.R., Ramakrishnan, V.N. et al. Dual-chirality GAA-CNTFET-based SCPF-TCAM cell design for low power and high performance. J Comput Electron 18, 1045–1054 (2019). https://doi.org/10.1007/s10825-019-01362-y

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