Journal of Computational Electronics

, Volume 17, Issue 2, pp 670–681 | Cite as

Analysis and modeling of unipolar junction transistor with excellent performance: a novel DG MOSFET with \({N}^{+}{-}{P}^{-}\) junction

  • Zeinab Ramezani
  • Ali A. Orouji


We propose herein a new dual-gate metal–oxide–semiconductor field-effect transistor (MOSFET) with just a unipolar junction (UJ-DG MOSFET) on the source side. The UJ-DG MOSFET structure is constructed from an \({N}^{+}\) region on the source side with the rest consisting of a \({P}^{-}\) region over the gate and drain, forming an auxiliary gate over the drain region with appropriate length and work function (named A-gate), converting the drain to an \({N}^{+}\) region. The new structure behaves as a MOSFET, exhibiting better efficiency than the conventional double-gate MOSFET (C-DG MOSFET) thanks to the modified electric field. The amended electric field offers advantages including improved electrical characteristics, reliability, leakage current, \({I}_{\mathrm{ON}}/I_{\mathrm{OFF}}\) ratio, gate-induced drain leakage, and electron temperature. Two-dimensional analytical models of the surface potential and electric field over the channel and drain are applied to investigate the drain current in the UJ-DG MOSFET. To confirm their accuracy, the MOSFET characteristics obtained using the 2D Atlas simulator for the UJ-DG and C-DG are analyzed and compared.


Analytical model Band-to-band tunneling DG-MOSFET Leakage current Short-channel effects Unipolar junction 


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Authors and Affiliations

  1. 1.Electrical and Computer Engineering DepartmentSemnan UniversitySemnanIran

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