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20-nm T-gate composite channel enhancement-mode metamorphic HEMT on GaAs substrates for future THz applications

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Abstract

In this paper, the RF and DC behaviours of a SiN-passivated 20-nm gate length metamorphic high electron mobility transistor (MHEMT) on GaAs substrate with \({\updelta }\)-doped sheets on either side of the composite channel are studied using the Synopsys TCAD tool. The 20-nm enhancement-mode MHEMT with \({\updelta }\)-doped sheets on either side of the \(\hbox {In}_{0.75}\hbox {Ga}_{0.25}\hbox {As}\)/InAs/ \(\hbox {In}_{0.75}\hbox {Ga}_{0.25}\hbox {As}\) multilayer channel shows a transconductance of 3000 mS/mm, cut-off frequency (\({f}_{\mathrm{T}}\)) of 760 GHz and a maximum-oscillation frequency (\({f}_{\mathrm{max}}\)) of 1270 GHz. The threshold voltage of the device is found to be 0.07 V. The room-temperature Hall mobilities of the two-dimensional sheet charge density (2DEG) are measured to be over \(12800\,\hbox {cm}^{2}\)/Vs with a sheet charge density larger than 4 \(\times \) \(10^{12}\,\hbox {cm}^{-2}\). These high-performance enhancement-mode MHEMTs are attractive candidates for future terahertz applications such as high-resolution radars for space research and also for low-noise wide-bandwidth amplifier for future communication systems.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Karunya University, Coimbatore, Tamilnadu, India

    J. Ajayan & D. Nirmal

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  1. J. Ajayan
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  2. D. Nirmal
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Correspondence to D. Nirmal.

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Ajayan, J., Nirmal, D. 20-nm T-gate composite channel enhancement-mode metamorphic HEMT on GaAs substrates for future THz applications. J Comput Electron 15, 1291–1296 (2016). https://doi.org/10.1007/s10825-016-0884-4

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  • DOI: https://doi.org/10.1007/s10825-016-0884-4

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