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Journal of Computational Electronics

, Volume 15, Issue 1, pp 138–143 | Cite as

Silicene field effect transistor with high on/off current ratio and good current saturation

  • Mehran Vali
  • Daryoosh Dideban
  • Negin Moezi
Article

Abstract

We investigate theoretically the possibility of exploiting the electrically tunable band gap property of silicene to achieve field effect transistor with improved characteristics. We find that the silicene field effect transistor where a band gap is introduced through a perpendicular electric field shows a subthreshold swing smaller than 60 mV/decade and a switching effect with high on/off current ratio exceeding \(10^{5}\). We find also that the device output characteristic displays a very good saturation due to improved pinch-off of the channel, stemming from the electrically induced band gap.

Keywords

Silicene field effect transistor Electrically induced gap Current saturation Transconductance 

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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  1. 1.Institute of Nanoscience and NanotechnologyUniversity of KashanKashanIran
  2. 2.Depertment of Electrical and Computer EngineeringUniversity of KashanKashanIran
  3. 3.Technical and Vocational UniversityKashanIran

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