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Journal of Computational Electronics

, Volume 15, Issue 1, pp 301–310 | Cite as

A new high-performance phototransistor design based on both surface texturization and graded gate doping engineering

  • F. Djeffal
  • H. Ferhati
Article

Abstract

In this paper, we propose a new optically controlled field effect transistor, OC-FET, based on both surface texturization and graded gate doping engineering. The proposed design consists of a gate with both graded doping and surface texturization aspects to ensure high efficient light absorption and low dark current, respectively. Moreover, using an analytical investigation, an overall performance comparison of the proposed dual texturized gate (DTG) OC-FET device and conventional OC-FETs has been studied in order to confirm the enhanced optical and electrical performance of the proposed design in terms of increased photoresponsivity (R), optical gain \((G), I_{ON}/I_{OFF}\) ratio, drain current driving capability \((I_{DMAX})\) and high signal to noise ratio. Simulations show very good agreement between the results of the developed analytical models and those of TCAD software for wide range of design parameters. The developed analytical models are used to formulate the objective functions to optimize the device performance using a multi-objective genetic algorithm (MOGA). The proposed MOGA-based approach is used to search the optimal design parameters, for which the electrical and optical device performance is maximized. The obtained superior electrical performance suggests that our DTG OC-FET offers great promise as optical sensors and transducers for CMOS-based optical communications.

Keywords

Phototransistor Gate engineering  Texturization  MOGA OC-FET 

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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  1. 1.LEA, Department of ElectronicsUniversity of BatnaBatnaAlgeria
  2. 2.LEPCMUniversity of BatnaBatnaAlgeria

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