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Physical model for electroforming process in valence change resistive random access memory

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Abstract

A physical model is developed for electroforming process in valence change resistive random access memory. In the developed model, electric field- and temperature-dependent vacancy generation, drift/diffusion in the forming process are considered. Based on the proposed model, the intrinsic nature of pulse amplitude dependence of forming time is attributed to combined effects of vacancy generation and migration. The evolution of microscopic vacancy concentration during forming operation is calculated and the effect of vacancy migration on forming process is quantitatively evaluated. The simulated pulse amplitude dependence of forming time agrees well with the experimental data.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant No. 61306117, 61322408, 61221004, 61334007, 61274091, 61106119, and 61106082) and the National Basic Research Program of China (973 Program) (Grant No. 2010CB934200 and 2011CBA00602) and National High Technology Research and Development Program (863 Program) (Grant No. 2014AA032900, 2011AA010401 and 2011AA010402)

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Authors and Affiliations

  1. Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People’s Republic of China

    Pengxiao Sun, Ling Li, Nianduan Lu, Hangbing Lv & Ming Liu

  2. Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People’s Republic of China

    Pengxiao Sun & Su Liu

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  1. Pengxiao Sun
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  2. Ling Li
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  3. Nianduan Lu
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  5. Ming Liu
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Correspondence to Ling Li.

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Sun, P., Li, L., Lu, N. et al. Physical model for electroforming process in valence change resistive random access memory. J Comput Electron 14, 146–150 (2015). https://doi.org/10.1007/s10825-014-0634-4

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  • DOI: https://doi.org/10.1007/s10825-014-0634-4

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