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An impact of bias and structure dependent L\(_\mathrm{SD}\) variation on the performance of GaN HEMTs based biosensor

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Abstract

In this paper, we discussed the effect of different bias and structures in relation to S-D distance variation on the device electrical and expected biosensing performance. Devices with source to drain length (\(L_{SD})\) variations from 3.5, 5.0, 8.0, 14.0, 26.0 to \(52~\upmu \)m were simulated at low and high bias voltages. Different structures having gate recess and finger variations were investigated for the complete range of \(L_{SD}\) variations. Small and very large \(L_{SD}\) variations in non-recessed structure showed good values of drain current \((I_{ds})\) and transconductances \((g_{m})\) at different low and high bias voltages respectively. Therefore expected response time and sensitivity could be improved by choosing a proper bias condition for different biosensing \(L_{SD}\) lengths. A gate recess structure showed better \(g_{m}\) values at low bias conditions for all \(L_{SD}\) lengths. However, \(I_{ds}\) degraded for these structures and hence the expected response time. The non-recessed structure variations in terms of number of fingers and gate width did not change the effective trends in \(L_{SD}\) variation.

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Acknowledgments

The authors acknowledge Dr. Chandra Shekhar, director, CEERI and Dr. C. Dhanvantri, GL-ODG, CEERI, Pilani for their support and encouragement. Authors would also like to thank CSIR for funding under budget head PSC-201:Microsensys.

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  1. CSIR-Central Electronics Engineering Research Institute, Pilani , 333031, Rajasthan, India

    Niketa Sharma, Diksha Joshi & Nidhi Chaturvedi

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  1. Niketa Sharma
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  2. Diksha Joshi
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Correspondence to Niketa Sharma.

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Sharma, N., Joshi, D. & Chaturvedi, N. An impact of bias and structure dependent L\(_\mathrm{SD}\) variation on the performance of GaN HEMTs based biosensor. J Comput Electron 13, 503–508 (2014). https://doi.org/10.1007/s10825-014-0561-4

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