Journal of Computational Electronics

, Volume 13, Issue 2, pp 503–508 | Cite as

An impact of bias and structure dependent L\(_\mathrm{SD}\) variation on the performance of GaN HEMTs based biosensor

  • Niketa Sharma
  • Diksha Joshi
  • Nidhi Chaturvedi


In this paper, we discussed the effect of different bias and structures in relation to S-D distance variation on the device electrical and expected biosensing performance. Devices with source to drain length (\(L_{SD})\) variations from 3.5, 5.0, 8.0, 14.0, 26.0 to \(52~\upmu \)m were simulated at low and high bias voltages. Different structures having gate recess and finger variations were investigated for the complete range of \(L_{SD}\) variations. Small and very large \(L_{SD}\) variations in non-recessed structure showed good values of drain current \((I_{ds})\) and transconductances \((g_{m})\) at different low and high bias voltages respectively. Therefore expected response time and sensitivity could be improved by choosing a proper bias condition for different biosensing \(L_{SD}\) lengths. A gate recess structure showed better \(g_{m}\) values at low bias conditions for all \(L_{SD}\) lengths. However, \(I_{ds}\) degraded for these structures and hence the expected response time. The non-recessed structure variations in terms of number of fingers and gate width did not change the effective trends in \(L_{SD}\) variation.


HEMTs Biosensors Transconductance Sensitivity Response time 



The authors acknowledge Dr. Chandra Shekhar, director, CEERI and Dr. C. Dhanvantri, GL-ODG, CEERI, Pilani for their support and encouragement. Authors would also like to thank CSIR for funding under budget head PSC-201:Microsensys.


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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  1. 1.CSIR-Central Electronics Engineering Research InstitutePilani India

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