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Two-dimensional modeling of subthreshold current and subthreshold swing of double-material-gate (DMG) strained-Si (s-Si) on SGOI MOSFETs

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Abstract

The present paper proposes the surface potential based two-dimensional (2D) analytical models of subthreshold current and subthreshold swing of nanoscale double-material-gate (DMG) strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs. The surface potential expression has been directly taken from our previous reported work. The effect of various device parameters on subthreshold current and swing like Ge mole fraction, Si film thickness, gate-length ratio and various combinations of control/screen gate work-functions have been discussed. The validity of the present 2D model is verified by using ATLASTM, a 2D device simulator from Silvaco.

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Authors and Affiliations

  1. Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India

    Mirgender Kumar, Sarvesh Dubey & S. Jit

  2. Department of Electronics and Communication Engineering, National Institute of Technology, Rourkela, 967008, India

    Pramod Kumar Tiwari

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  1. Mirgender Kumar
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  2. Sarvesh Dubey
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  3. Pramod Kumar Tiwari
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  4. S. Jit
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Correspondence to Mirgender Kumar.

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Kumar, M., Dubey, S., Tiwari, P.K. et al. Two-dimensional modeling of subthreshold current and subthreshold swing of double-material-gate (DMG) strained-Si (s-Si) on SGOI MOSFETs. J Comput Electron 12, 275–280 (2013). https://doi.org/10.1007/s10825-013-0442-2

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