Journal of Computational Electronics

, Volume 7, Issue 3, pp 192–196 | Cite as

Monte Carlo simulation of electron mobility in strained Si DG-FETs with TB bandstructure calculation



A low dimensional tight-binding (TB) based bandstructure calculation program is developed for double-gate MOSFETs (DG-FETs) to model the effects of channel orientation, transverse electric field, stress, and geometry-induced quantum confinement. Electron mobility in the strained channel is then evaluated using the Monte Carlo (MC) method, based on the calculated bandstructure. It is concluded that electron mobility is enhanced by the splitting of conduction band valleys and the change of electron effective mass, as a function of layer thickness, crystal orientation and stress in strained Si DG-FETs.


Stress Electron mobility Ultra-thin-body Tight-binding (TB) Monte Carlo (MC) 


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© Springer Science+Business Media LLC 2008

Authors and Affiliations

  1. 1.Institute of MicroelectronicsTsinghua UniversityBeijingChina

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