Monte Carlo simulation of electron mobility in strained Si DG-FETs with TB bandstructure calculation
- 71 Downloads
A low dimensional tight-binding (TB) based bandstructure calculation program is developed for double-gate MOSFETs (DG-FETs) to model the effects of channel orientation, transverse electric field, stress, and geometry-induced quantum confinement. Electron mobility in the strained channel is then evaluated using the Monte Carlo (MC) method, based on the calculated bandstructure. It is concluded that electron mobility is enhanced by the splitting of conduction band valleys and the change of electron effective mass, as a function of layer thickness, crystal orientation and stress in strained Si DG-FETs.
KeywordsStress Electron mobility Ultra-thin-body Tight-binding (TB) Monte Carlo (MC)
Unable to display preview. Download preview PDF.
- 1.Zhao, J., Zou, J., Yu, Z.: Physical modeling of hole mobility in silicon inversion layers under uniaxial stress. Book of Abstract, IWCE, Vienna, Austria, p. 149 (2006) Google Scholar
- 2.Rahman, A., Klimeck, G., Boykin, T.B., Lundstrom, M.: Bandstructure effects in ballistic nanoscale MOSFETs. 2004 IEDM Proc., p. 139 (2004) Google Scholar
- 3.Guan, X., Lu, J., Wang, Y., Yu, Z.: Atomistic-level modeling for thickness dependence of electron mobility in InSb QW-FETs. SISPAD Proc., Monterey, CA, USA, p. 248 (2006) Google Scholar
- 5.Boykin, T.B., Klimeck, G., Bowen, R.C., Oyafuso, F.: Diagonal parameter shifts due to nearest-neighbor displacement in empirical tight-binding theory. Phys. Rev. B 66(125207), 1–4 (2002) Google Scholar