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Journal of Computational Electronics

, Volume 7, Issue 3, pp 151–154 | Cite as

Impact-ionization coefficient in silicon at high fields— a parametric approach

  • M. Rudan
  • R. Katilius
  • S. Reggiani
  • E. Gnani
  • G. Baccarani
Article

Abstract

The impact-ionization coefficient α n at high fields is derived in terms of the electric field ℰ and lattice temperature T L , without introducing a priori relations among the parameters. An asymptotic analysis leads to simplifications that validate closed-form expressions of α n . The role of the relaxation times in determining the slope of α n (ℰ) is discussed, along with the meaning of the critical field.

Keywords

Impact ionization in silicon High-field regime Analytical and parametric modeling 

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Copyright information

© Springer Science+Business Media LLC 2008

Authors and Affiliations

  • M. Rudan
    • 1
  • R. Katilius
    • 2
  • S. Reggiani
    • 1
  • E. Gnani
    • 1
  • G. Baccarani
    • 1
  1. 1.ARCES and DEIS—University of BolognaBolognaItaly
  2. 2.Semiconductor Physics InstituteVilniusLithuania

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